IHW30N135R3FKSA1 Infineon Technologies, IHW30N135R3FKSA1 Datasheet - Page 7

• Manufacturer Part Number: IHW30N135R3FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IHW30N135R3FKSA1

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.35 kV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 175 W
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Mounting Style: Through Hole
• Part # Aliases: IHW30N135R3 IHW30N135R3XK

Figure 1. Forwardbiassafeoperatingarea
Figure 3. Collectorcurrentasafunctionofcase
100
0.1
10
60
50
40
30
20
10
1
0
25
1
t
p
10ms
V
=1µs
10µs
50µs
1ms
(D=0,T
temperature
(V
5µs
CE
DC
,COLLECTOR-EMITTERVOLTAGE[V]
GE
50
T
15V,T
C
,CASETEMPERATURE[°C]
C
=25°C,T
10
75
vj
175°C)
vj
100
175°C;V
100
125
GE
=15V)
InductionHeatingSeries
150
1000
175
7
Figure 2. Powerdissipationasafunctionofcase
Figure 4. Typicaloutputcharacteristic
350
300
250
200
150
100
50
90
80
70
60
50
40
30
20
10
0
0
0.0
25
V
V
GE
temperature
(T
(T
CE
=20V
vj
vj
17V
15V
13V
11V
,COLLECTOR-EMITTERVOLTAGE[V]
=25°C)
9V
7V
5V
50
175°C)
T
C
,CASETEMPERATURE[°C]
1.0
75
100
2.0
IHW30N135R3
125
Rev.2.1,2012-10-12
3.0
150
175
4.0