IHW30N135R3FKSA1 Infineon Technologies, IHW30N135R3FKSA1 Datasheet - Page 2
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IHW30N135R3FKSA1
Manufacturer Part Number
IHW30N135R3FKSA1
Description
IGBT Transistors IGBT PRODUCTS
Manufacturer
Infineon Technologies
Datasheet
1.IHW30N135R3FKSA1.pdf
(15 pages)
Specifications of IHW30N135R3FKSA1
Rohs
yes
Collector- Emitter Voltage Vceo Max
1.35 kV
Collector-emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
60 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
175 W
Package / Case
TO-247-3
Continuous Collector Current Ic Max
30 A
Mounting Style
Through Hole
Part # Aliases
IHW30N135R3 IHW30N135R3XK
KeyPerformanceandPackageParameters
ReverseconductingIGBTwithmonolithicbodydiode
Features:
•Offersnewhigherbreakdownvoltageto1350Vforimproved
reliability
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOP
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowV
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinV
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogenfree(accordingtoIEC61249-2-21)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Inductivecooking
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
Type
IHW30N135R3
CEsat
TM
technologyoffering:
1350V
V
CE
CEsat
30A
I
C
V
InductionHeatingSeries
CEsat
1.65V
,T
vj
=25°C
2
175°C
T
vjmax
H30R1353
Marking
1
2
IHW30N135R3
3
Rev.2.1,2012-10-12
G
PG-TO247-3
Package
C
E