IHW30N135R3FKSA1 Infineon Technologies, IHW30N135R3FKSA1 Datasheet - Page 2

• Manufacturer Part Number: IHW30N135R3FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IHW30N135R3FKSA1

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.35 kV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 175 W
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Mounting Style: Through Hole
• Part # Aliases: IHW30N135R3 IHW30N135R3XK


KeyPerformanceandPackageParameters
ReverseconductingIGBTwithmonolithicbodydiode
Features:
•Offersnewhigherbreakdownvoltageto1350Vforimproved
reliability
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOP
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowV
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinV
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogenfree(accordingtoIEC61249-2-21)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Inductivecooking
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
Type
IHW30N135R3
CEsat
TM
technologyoffering:
1350V
V
CE
CEsat
30A
I
C
V
InductionHeatingSeries
CEsat
1.65V
,T
vj
=25°C
2
175°C
T
vjmax
H30R1353
Marking
1
2
IHW30N135R3
3
Rev.2.1,2012-10-12
G
PG-TO247-3
Package
C
E