IHW30N135R3FKSA1 Infineon Technologies, IHW30N135R3FKSA1 Datasheet - Page 6

• Manufacturer Part Number: IHW30N135R3FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IHW30N135R3FKSA1

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.35 kV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 175 W
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Mounting Style: Through Hole
• Part # Aliases: IHW30N135R3 IHW30N135R3XK

SwitchingCharacteristic,InductiveLoad,atT
IGBTCharacteristic
Parameter
Turn-off delay time
Fall time
Turn-off energy
Turn-off energy, soft switching
Symbol Conditions
t
t
E
E
d(off)
f
off
off
InductionHeatingSeries
T
V
V
r
C =40pF
L ,C fromFig.E
Energy losses include “tail” and
diode reverse recovery.
dv/dt=150.0V/µs
G
vj
CC
GE
vj
=10.0 ,L =220nH,
=175°C,
=175°C
=600V,I
=0.0/15.0V,
6
C
=30.0A,
min.
-
-
-
-
IHW30N135R3
Value
3.50
0.82
typ.
410
100
Rev.2.1,2012-10-12
max.
-
-
-
-
Unit
mJ
mJ
ns
ns