IHW30N135R3FKSA1 Infineon Technologies, IHW30N135R3FKSA1 Datasheet - Page 10

• Manufacturer Part Number: IHW30N135R3FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IHW30N135R3FKSA1

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.35 kV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 175 W
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Mounting Style: Through Hole
• Part # Aliases: IHW30N135R3 IHW30N135R3XK

Figure 13. Typicalswitchingenergylossesasa
Figure 15. Typicalswitchingenergylossesasa
5.00
4.75
4.50
4.25
4.00
3.75
3.50
3.25
3.00
8
7
6
5
4
3
2
1
0
400
0
V
CE
functionofgateresistor
(inductiveload,T
V
Figure E)
functionofcollectoremittervoltage
(inductiveload,T
I
Figure E)
C
,COLLECTOR-EMITTERVOLTAGE[V]
GE
=30A,r
E
E
off
off
=15/0V,I
600
10
r
G
,GATERESISTOR[ ]
G
=10 ,Dynamictestcircuitin
C
800
20
=30A,Dynamictestcircuitin
vj
=175°C,V
vj
=175°C,V
1000
30
CE
GE
=600V,
1200
=15/0V,
40
InductionHeatingSeries
1400
50
10
Figure 14. Typicalswitchingenergylossesasa
Figure 16. Typicalturnoffswitchingenergylossfor
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3
2
1
100
25
functionofjunctiontemperature
(inductiveload,V
I
Figure E)
softswitching
(inductiveload,T
I
Figure E)
C
C
T
=30A,r
=30A,r
E
T
T
vj
50
off
,JUNCTIONTEMPERATURE[°C]
j
j
=25°C
=175°C
dv/dt,VOLTAGESLOPE[V/µs]
G
G
=10 ,Dynamictestcircuitin
=10 ,Dynamictestcircuitin
75
CE
100
vj
=600V,V
=175°C,V
IHW30N135R3
125
Rev.2.1,2012-10-12
GE
GE
1000
=15/0V,
=15/0V,
150
175