IHW30N135R3FKSA1 Infineon Technologies, IHW30N135R3FKSA1 Datasheet - Page 4

• Manufacturer Part Number: IHW30N135R3FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IHW30N135R3FKSA1

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.35 kV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 175 W
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Mounting Style: Through Hole
• Part # Aliases: IHW30N135R3 IHW30N135R3XK

Maximumratings
ThermalResistance
Characteristic
Parameter
Collector-emitter voltage
DCcollectorcurrent,limitedbyT
T
T
Pulsedcollectorcurrent,t
TurnoffsafeoperatingareaV
Diodeforwardcurrent,limitedbyT
T
T
Diodepulsedcurrent,t
Gate-emitter voltage
TransientGate-emittervoltage(t
PowerdissipationT
PowerdissipationT
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Parameter
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
C
C
C
C
=25°C
=100°C
=25°C
=100°C
C
C
=25°C
=100°C
p
limitedbyT
p
limitedbyT
CE
 1350V,T
p
vjmax
=10µs,D<0.010)
vjmax
vjmax
Symbol Conditions
R
R
R
vjmax
th(j
th(j
th(j
-
-
-
InductionHeatingSeries
c)
c)
a)
vj
 175°C
4
Symbol
V
I
I
-
I
I
V
P
T
T
M
C
Cpuls
F
Fpuls
vj
stg
CE
GE
tot
-40...+175
-55...+175
IHW30N135R3
Value
349.0
175.0
1350
60.0
30.0
90.0
90.0
60.0
30.0
90.0
Max.Value
±20
±25
260
0.6
0.43
0.43
Rev.2.1,2012-10-12
40
Unit
Nm
°C
°C
°C
W
V
A
A
A
A
A
V
Unit
K/W
K/W
K/W