FGH40T65UPD Fairchild Semiconductor, FGH40T65UPD Datasheet
FGH40T65UPD
Specifications of FGH40T65UPD
Related parts for FGH40T65UPD
FGH40T65UPD Summary of contents
Page 1
... R (Diode) Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2012 Fairchild Semiconductor Corporation FGH40T65UPD Rev 175 C J General Description Using innovative field stop trench IGBT technology, Fairchild new series of field stop trench IGBTs offer optimum perfor mance for solar inverter, UPS, welder, and digital power genera- tor where low conduction and switching losses are essential ...
Page 2
... Fall Time f E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts T Short Circuit Withstand Time SC ©2012 Fairchild Semiconductor Corporation FGH40T65UPD Rev. C0 Package Eco Status Packing Type TO-247 - T = 25°C unless otherwise noted C Test Conditions Min 1mA GE C ...
Page 3
... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM E Reverse Recovery Energy rec t Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr ©2012 Fairchild Semiconductor Corporation FGH40T65UPD Rev. C0 (Continued) Test Conditions V = 400V 40A 15V 25°C unless otherwise noted C Test Conditions o ...
Page 4
... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4.0 Common Emitter V = 15V GE 3.5 3.0 2.5 2.0 1.5 1 100 Collector-EmitterCase Temperature, T ©2012 Fairchild Semiconductor Corporation FGH40T65UPD Rev. C0 Figure 2. Typical Output Characteristics 120 100 12V 80 60 10V [V] CE Figure 4 ...
Page 5
... Figure 11. SOA Characteristics 1000 100 10 1 *Notes 175 Single Pulse 0.01 0 Collector-Emitter Voltage, V ©2012 Fairchild Semiconductor Corporation FGH40T65UPD Rev. C0 Figure 8. Saturation Voltage vs Common Emitter [V] GE Figure 10. Gate charge Characteristics ...
Page 6
... Collector Current, I Figure 17. Switching Loss vs. Collector Current 10000 E on 1000 E off 100 Collector Current, I ©2012 Fairchild Semiconductor Corporation FGH40T65UPD Rev. C0 Figure 14. Turn-on Characteristics vs. 1000 100 Common Emitter 400V 15V 40A 175 ...
Page 7
... F 200 100 T = 175 Forwad Current, I ©2012 Fairchild Semiconductor Corporation FGH40T65UPD Rev. C0 Figure 20. Load Current Vs. Frequence 160 120 125 150 175 200 Figure 22. Reverse Recovery Current 175 ...
Page 8
... Typical Performance Characteristics 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E 0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0.01 1E-5 ©2012 Fairchild Semiconductor Corporation FGH40T65UPD Rev. C0 Figure 25. Transient Thermal Impedance of IGBT 1E-4 1E-3 Rectangular Pulse Duration [sec] Figure 26.Transient Thermal Impedance of Diode 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec Duty Factor t1/t2 Peak T = Pdm x Zthjc + 0.01 0 ...
Page 9
... Mechanical Dimensions ©2012 Fairchild Semiconductor Corporation FGH40T65UPD Rev 247A03 9 www.fairchildsemi.com ...
Page 10
... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FGH40T65UPD Rev. C0 ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...