FGA20S125P Fairchild Semiconductor, FGA20S125P Datasheet

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FGA20S125P

Manufacturer Part Number
FGA20S125P
Description
IGBT Transistors 2.5A Output Current GateDrive Optocopler
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGA20S125P

Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
1250 V
Collector-emitter Saturation Voltage
2.44 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current At 25 C
40 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-3PN
Continuous Collector Current Ic Max
40 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGA20S125P
Manufacturer:
FSC
Quantity:
15 000
Part Number:
FGA20S125P
Manufacturer:
FAIRCHILD
Quantity:
8 000
© 2012 Fairchild Semiconductor Corporation
FGA20S125P Rev. C3
Absolute Maximum Ratings
Thermal Characteristics
Notes:
1: Limited by Tjmax
FGA20S125P
1250 V, 20 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: V
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave oven
V
V
I
I
I
I
P
T
T
T
R
R
C
CM (1)
F
F
stg
J
L
CES
GES
D
θJC
θJA
Symbol
Symbol
(IGBT)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G C E
CE(sat)
= 2.0 V @ I
TO-3PN
Description
Parameter
T
C
C
= 25°C unless otherwise noted
= 20 A
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
1
= 25
= 100
= 25
= 100
= 25
= 100
General Description
Using advanced field stop trench and shorted anode technol-
ogy, Fairchild
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
o
o
o
C
C
C
o
o
o
C
C
C
®
’s shorted-anode trench IGBTs offer superior con-
Typ.
--
--
G
-55 to +175
-55 to +175
Ratings
1250
±25
250
125
300
40
20
60
40
20
Max.
0.6
40
C
E
April 2013
www.fairchildsemi.com
Unit
Unit
o
o
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
A
C
C
C

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FGA20S125P Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Notes: 1: Limited by Tjmax © 2012 Fairchild Semiconductor Corporation FGA20S125P Rev. C3 General Description Using advanced field stop trench and shorted anode technol- ogy, Fairchild = duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability ...

Page 2

... Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc © 2012 Fairchild Semiconductor Corporation FGA20S125P Rev. C3 Package Reel Size TO-3PN - T = 25°C unless otherwise noted C Test Conditions Min 1250 ...

Page 3

... Figure 5. Saturation Voltage vs. Case 3.5 Common Emitter V = 15V GE 40A 3.0 2.5 20A 2 10A C 1.5 1 100 Collector-EmitterCase Temperature, T © 2012 Fairchild Semiconductor Corporation FGA20S125P Rev. C3 Figure 2. Typical Saturation Voltage 15V 12V 10V 9V 8V 5.0 6.0 7.0 8.0 [V] CE Figure 4. Transfer Characteristics 4.0 5.0 [V] CE Figure 6. Saturation Voltage vs. Vge 125 150 175 ...

Page 4

... Common Emitter t V d(on 20A 175 Gate Resistance, R © 2012 Fairchild Semiconductor Corporation FGA20S125P Rev. C3 Figure 8. Capacitance Characteristics Common Emitter 175 C C 40A 16 20 [V] GE Figure 10. SOA Characteristics 400V 600V 90 120 Figure 12. Turn-off Characteristics vs. = 600V 15V GE ...

Page 5

... Figure 17. Turn off Switching SOA Characteristics 100 10 Safe Operating Area 15V 175 100 Collector-Emitter Voltage, V © 2012 Fairchild Semiconductor Corporation FGA20S125P Rev. C3 Figure 14.Turn-off Characteristics VS. 1000 d(on [A] C Figure 16. Switching Loss VS. Collector Current Ω ...

Page 6

... Figure 19. Transient Thermal Impedance of IGBT 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 1E-4 © 2012 Fairchild Semiconductor Corporation FGA20S125P Rev. C3 Duty Factor t1/t2 Peak T 1E-3 0.01 0.1 Rectangular Pulse Duration [sec Pdm x Zthjc + www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions © 2012 Fairchild Semiconductor Corporation FGA20S125P Rev. C3 TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2012 Fairchild Semiconductor Corporation FGA20S125P Rev. C3 ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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