IS42S32800B-7BL ISSI, Integrated Silicon Solution Inc, IS42S32800B-7BL Datasheet - Page 38
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IS42S32800B-7BL
Manufacturer Part Number
IS42S32800B-7BL
Description
IC SDRAM 256MBIT 143MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-7BL
Package / Case
90-BGA
Memory Size
256M (8Mx32)
Format - Memory
RAM
Memory Type
SDRAM
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Data Bus Width
32 bit
Organization
2 Mbit x 32
Maximum Clock Frequency
143 MHz
Access Time
7 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
150 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Density
256Mb
Address Bus
14b
Access Time (max)
5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
BGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
706-1024
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800B-7BL
Manufacturer:
ISSI
Quantity:
1 000
Company:
Part Number:
IS42S32800B-7BL
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32800B-7BL
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S32800B-7BL-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS42S32800B-7BLI
Manufacturer:
ISSI
Quantity:
1 000
Company:
Part Number:
IS42S32800B-7BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS42S32800B-7BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS42S32800B
38
Figure 11.3.Random Row Read (Interleaving Banks)
BS0,1
CAS#
A0-A9
DQM
RAS#
WE#
CKE
CLK
CS#
A10
DQ
High
Hi-Z
Command
Activate
Bank B
RBx
RBx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
(Burst Length=8,CAS#Latency=3)
t
CK3
t
RCD
Command
Bank B
Read
CBx
t
AC3
Bx0
Bx1 Bx2
Command
Activate
Bank A
RAx
RAx
Bx3
Bx4
Command
Bank A
Read
CAx
Bx5
Bx6
Precharge
Command
Bank B
Bx7
Ax0 Ax1
t
RP
Command
Activate
Bank B
RBy
RBy
Ax2
Integrated Silicon Solution, Inc.
Ax3
Ax4 Ax5
Command
Bank B
Read
CBy
Ax6
Precharge
Command
Bank A
Ax7
By0
07/21/09
Rev. F