IS42S32800B-7BL ISSI, Integrated Silicon Solution Inc, IS42S32800B-7BL Datasheet - Page 10
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IS42S32800B-7BL
Manufacturer Part Number
IS42S32800B-7BL
Description
IC SDRAM 256MBIT 143MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-7BL
Package / Case
90-BGA
Memory Size
256M (8Mx32)
Format - Memory
RAM
Memory Type
SDRAM
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Data Bus Width
32 bit
Organization
2 Mbit x 32
Maximum Clock Frequency
143 MHz
Access Time
7 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3 V
Maximum Operating Current
150 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Density
256Mb
Address Bus
14b
Access Time (max)
5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
BGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
706-1024
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800B-7BL
Manufacturer:
ISSI
Quantity:
1 000
Company:
Part Number:
IS42S32800B-7BL
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32800B-7BL
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S32800B-7BL-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS42S32800B-7BLI
Manufacturer:
ISSI
Quantity:
1 000
Company:
Part Number:
IS42S32800B-7BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS42S32800B-7BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS42S32800B
10
CLK
D Q M
COMMAND
DQ’s
A read burst without the auto precharge function may be interrupted by a BankPrecharge/
PrechargeAll command to the same bank.The following figure shows the optimum time that
BankPrecharge/PrechargeAll command is issued in different CAS#latency.
CLK
DQM
COMMAND
CAS# latency=2
t CK2 , DQ’s
CLK
DQM
COMMAND
CAS# latency=2
: "H" or "L"
tCK2, DQs
: "H" or "L"
: "H" or "L"
tCK2, DQs
NOP
T0
T0
NOP
Read to Write Interval (Burst Length = 4,CAS#Latency =3)
Read to Write Interval (Burst Length = 4,CAS#Latency =2)
T0
NOP
Read to Write Interval (Burst Length = 4,CAS#Latency =2)
READ A
T1
T1
NOP
T1
NOP
READ A
T2
NOP
ACTIVAT E
T2
BANKA
T2
T3
T3
NOP
NOP
T3
NOP
DOUT A
NOP
T4
T4
READ A
NOP
T4
1 Clk Interval
the Write Command
Must be Hi-Z before
WRITEB
NOP
T5
T5
DIN B 0
WRITEA
T5
DIN A 0
WRITE B
DIN B 1
T6
DINB 0
T6
NOP
DIN A 1
NOP
T6
Integrated Silicon Solution, Inc.
NOP
T7
T7
DINB 1
NOP
DIN B 2
T7
NOP
DIN A 2
NOP
NOP
T8
DINB 2
T8
DIN B 3
NOP
T8
DIN A 3
07/21/09
Rev. F