MT48LC2M32B2TG-7:G TR Micron Technology Inc, MT48LC2M32B2TG-7:G TR Datasheet - Page 47
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MT48LC2M32B2TG-7:G TR
Manufacturer Part Number
MT48LC2M32B2TG-7:G TR
Description
IC SDRAM 64MBIT 143MHZ 86TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48LC2M32B2P-6G_TR.pdf
(69 pages)
Specifications of MT48LC2M32B2TG-7:G TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (2Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOP
Package
86TSOP-II
Density
64 Mb
Address Bus Width
13 Bit
Operating Supply Voltage
3.3 V
Maximum Clock Rate
143 MHz
Maximum Random Access Time
17|8|5.5 ns
Organization
2Mx32
Address Bus
13b
Access Time (max)
17/8/5.5ns
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
160mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
557-1076-2
Table 18:
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5
64MSDRAMx32_2.fm - Rev. J 12/08 EN
AC Characteristics
Parameter
Access time from CLK
(positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM
hold time
CS#, RAS#, CAS#, WE#, DQM
setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time
ACTIVE-to-PRECHARGE
command
ACTIVE-to-ACTIVE command
period
AUTO REFRESH period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows)
Refresh period–Automotive
(4,096 rows)
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b
command
Transition time
Write recovery time
Exit self refresh to ACTIVE
command
Electrical Characteristics and Recommended AC Operating Conditions
Notes 5, 6, 8, 9, 11 apply to entire table; notes appear on pages 49 and 50; V
CL = 3
CL = 2
CL = 1
CL = 3
CL = 2
CL = 1
CL = 3
CL = 2
CL = 1
Symbol
t
t
t
t
t
t
t
t
t
t
AC (3)
AC (2)
AC (1)
t
CK (3)
CK (2)
CK (1)
HZ (3)
HZ (2)
HZ (1)
t
t
t
REF
t
t
t
t
t
CMH
t
t
t
CMS
t
t
t
CKH
RCD
RRD
t
CKS
t
RAS
t
t
XSR
t
t
RFC
REF
WR
AH
DH
OH
CH
AS
DS
RC
RP
t
CL
LZ
T
AT
Min
38.7
1.5
1.5
1.5
1.5
4.5
1.5
0.3
55
60
15
15
10
55
1
2
2
5
1
1
1
1
2
–
–
–
–
–
–
–
–
–
-5
Max
120k
4.5
1.2
64
16
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
47
Min
38.7
16.5
16.5
1.5
5.5
1.5
1.5
1.5
0.3
55
60
11
55
1
2
2
1
1
1
5
1
2
2
–
–
–
–
–
–
–
–
–
-55
Max
120k
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.2
64
16
5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
+ 6ns
1CLK
12ns
Min
1.5
2.5
2.5
1.5
1.5
1.5
0.3
10
20
42
60
60
18
18
12
70
1
6
1
1
1
1
2
–
–
-6
Max
120k
5.5
7.5
5.5
7.5
1.2
17
17
64
16
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Electrical Specifications
DD
+ 7ns
, V
1CLK
14ns
Min
2.75
2.75
2.5
0.3
10
20
70
20
14
70
42
70
20
–
–
–
1
2
7
1
2
1
2
1
2
–
1
–
–
–
–
©2001 Micron Technology, Inc. All rights reserved.
DD
64Mb: x32 SDRAM
Q = +3.3V ±0.3V
-7
Max
120k
5.5
5.5
1.2
17
17
64
16
8
–
–
–
–
–
–
–
–
–
–
–
–
–
8
–
–
–
–
–
–
–
–
–
–
Units Notes
t
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
ns
ns
23
23
23
10
10
10
25
24
28
20
7