AT45DB161E-SSHD-B Adesto Technologies, AT45DB161E-SSHD-B Datasheet - Page 9
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AT45DB161E-SSHD-B
Manufacturer Part Number
AT45DB161E-SSHD-B
Description
Flash 16M 2.5-3.6V 85Mhz Serial Flash
Manufacturer
Adesto Technologies
Datasheet
1.AT45DB161E-SHD-B.pdf
(72 pages)
Specifications of AT45DB161E-SSHD-B
Rohs
yes
Data Bus Width
8 bit
Memory Type
Data Flash
Memory Size
16 Mbit
Architecture
Flexible, Uniform Erase
Timing Type
Synchronous
Interface Type
SPI
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.5 V
Maximum Operating Current
26 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Factory Pack Quantity
100
5.6
5.7
of the main memory array to read and the last 10 bits (BA9 - BA0) of the 22-bit address sequence specify the starting
byte address within the page. To perform a Continuous Array Read using the binary page size (512 bytes), the opcode
01h must be clocked into the device followed by three address bytes (A20 - A0). Following the address bytes, additional
clock pulses on the SCK pin will result in data being output on the SO pin.
The CS pin must remain low during the loading of the opcode, the address bytes, and the reading of data. When the end
of a page in the main memory is reached during a Continuous Array Read, the device will continue reading at the
beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the end of
one page to the beginning of the next page). When the last bit in the main memory array has been read, the device will
continue reading back at the beginning of the first page of memory. As with crossing over page boundaries, no delays will
be incurred when wrapping around from the end of the array to the beginning of the array.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum
SCK frequency allowable for the Continuous Array Read is defined by the f
Read bypasses both data buffers and leaves the contents of the buffers unchanged.
Main Memory Page Read
A Main Memory Page Read allows the reading of data directly from a single page in the main memory, bypassing both of
the data buffers and leaving the contents of the buffers unchanged. To start a page read using the standard DataFlash
page size (528 bytes), an opcode of D2h must be clocked into the device followed by three address bytes (which
comprise the 22-bit page and byte address sequence) and four dummy bytes. The first 12 bits
(PA11 - PA0) of the 22-bit address sequence specify the page in main memory to be read and the last 10 bits
(BA9 - BA0) of the 22-bit address sequence specify the starting byte address within that page. To start a page read using
the binary page size (512 bytes), the opcode D2h must be clocked into the device followed by three address bytes and
four dummy bytes. The first 12 bits (A20 - A9) of the 21-bit address sequence specify which page of the main memory
array to read, and the last nine bits (A8 - A0) of the 21-bit address sequence specify the starting byte address within that
page. The dummy bytes that follow the address bytes are sent to initialize the read operation. Following the dummy
bytes, the additional pulses on SCK result in data being output on the SO (serial output) pin.
The CS pin must remain low during the loading of the opcode, the address bytes, the dummy bytes, and the reading of
data. Unlike the Continuous Array Read command, when the end of a page in main memory is reached, the device will
continue reading back at the beginning of the same page rather than the beginning of the next page.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO). The maximum
SCK frequency allowable for the Main Memory Page Read is defined by the f
Read bypasses both data buffers and leaves the contents of the buffers unchanged.
Buffer Read
The SRAM data buffers can be accessed independently from the main memory array, and utilizing the Buffer Read
command allows data to be sequentially read directly from either one of the buffers. Four opcodes, D4h or D1h for Buffer
1 and D6h or D3h for Buffer 2, can be used for the Buffer Read command. The use of each opcode depends on the
maximum SCK frequency that will be used to read data from the buffers. The D4h and D6h opcode can be used at any
SCK frequency up to the maximum specified by f
read operations up to the maximum specified by f
To perform a Buffer Read using the standard DataFlash buffer size (528 bytes), the opcode must be clocked into the
device followed by three address bytes comprised of 14 dummy bits and 10 buffer address bits (BFA9 - BFA0). To
perform a Buffer Read using the binary buffer size (512 bytes), the opcode must be clocked into the device followed by
three address bytes comprised of 15 dummy bits and nine buffer address bits (BFA8 - BFA0). Following the address
bytes, one dummy byte must be clocked into the device to initialize the read operation if using opcodes D4h or D6h. The
CS pin must remain low during the loading of the opcode, the address bytes, the dummy byte (if using opcodes D4h or
D6h), and the reading of data. When the end of a buffer is reached, the device will continue reading back at the beginning
of the buffer. A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO).
CAR1
CAR2
.
while the D1h and D3h opcode can be used for lower frequency
Adesto AT45DB161E [DATASHEET]
CAR3
SCK
specification. The Continuous Array
specification. The Main Memory Page
8782D–DFLASH–11/2012
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