AT45DB161E-SSHD-B Adesto Technologies, AT45DB161E-SSHD-B Datasheet - Page 5
![no-image](/images/no-image-200.jpg)
AT45DB161E-SSHD-B
Manufacturer Part Number
AT45DB161E-SSHD-B
Description
Flash 16M 2.5-3.6V 85Mhz Serial Flash
Manufacturer
Adesto Technologies
Datasheet
1.AT45DB161E-SHD-B.pdf
(72 pages)
Specifications of AT45DB161E-SSHD-B
Rohs
yes
Data Bus Width
8 bit
Memory Type
Data Flash
Memory Size
16 Mbit
Architecture
Flexible, Uniform Erase
Timing Type
Synchronous
Interface Type
SPI
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.5 V
Maximum Operating Current
26 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Factory Pack Quantity
100
3.
Memory Array
To provide optimal flexibility, the AT45DB161E memory array is divided into three levels of granularity comprising of
sectors, blocks, and pages.
the number of pages per sector and block. Program operations to the DataFlash can be done at the full page level or at
the byte level (a variable number of bytes). The erase operations can be performed at the chip, sector, block, or page
level.
Figure 3-1. Memory Architecture Diagram
Sector Architecture
131,072 /135,168 bytes
131,072/135,168 bytes
Sector 14 = 256 pages
131,072/135,168 bytes
Sector 15 = 256 pages
131,072/135,168 bytes
Sector 1 = 256 pages
Sector 2 = 256 pages
Sector 0b = 248 pages
126,976/130,944 bytes
Sector 0a = 8 pages
4,096/4,224 bytes
Figure 3-1, Memory Architecture Diagram
Sector 0a
Block = 4,096/4,224 bytes
Block Architecture
Block 510
Block 511
Block 30
Block 31
Block 32
Block 33
Block 62
Block 63
Block 64
Block 65
Block 0
Block 1
Block 2
illustrates the breakdown of each level and details
Adesto AT45DB161E [DATASHEET]
8 Pages
8782D–DFLASH–11/2012
Page Architecture
Page = 512/528 bytes
Page 4,094
Page 4,095
Page 14
Page 15
Page 16
Page 17
Page 18
Page 0
Page 1
Page 6
Page 7
Page 8
Page 9
5