MK10DN64VLF5 Freescale Semiconductor, MK10DN64VLF5 Datasheet - Page 33

• Manufacturer Part Number: MK10DN64VLF5
• Description: ARM Microcontrollers - MCU Kinetis 64K
• Manufacturer: Freescale Semiconductor

Specifications of MK10DN64VLF5

• Rohs: yes
• Core: ARM Cortex M4
• Processor Series: K10P32M50SF0
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 50 MHz
• Program Memory Size: 64 KB
• Data Ram Size: 16 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 1.71 V to 3.6 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: LQFP-48
• Mounting Style: SMD/SMT

1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the flash
memory module to obtain an effective endurance increase for the EEPROM data. The
built-in EEPROM record management system raises the number of program/erase cycles
that can be attained prior to device wear-out by cycling the EEPROM data through a
larger EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_FlexRAM =
where
Freescale Semiconductor, Inc.
n
n
t
n
n
n
t
nvmretee100
t
nvmwree128
nvmwree512
nvmretee10
n
Symbol
nvmwree16
nvmretd1k
nvmwree4k
nvmwree8k
• Writes_FlexRAM — minimum number of writes to each FlexRAM location
nvmcycd
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup. Minimum and typical values
assume all byte-writes to FlexRAM.
Data retention after up to 1 K cycles
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Write endurance
Description
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio = 8192
Table 21. NVM reliability specifications (continued)
EEPROM – 2 × EEESIZE
EEESIZE
K10 Sub-Family Data Sheet, Rev. 4 5/2012.
FlexRAM as EEPROM
× Write_efficiency × n
1.27 M
315 K
10 M
20 M
10 K
35 K
Min.
20
20
5
Peripheral operating requirements and behaviors
100 M
175 K
1.6 M
6.4 M
Typ.
50 M
j
50 K
100
100
≤ 125°C.
50
1
nvmcycd
Max.
—
—
—
—
—
—
—
—
—
cycles
writes
writes
writes
writes
writes
years
years
years
Unit
Notes
2
3
33