PC367N2TJOOF Sharp Microelectronics, PC367N2TJOOF Datasheet - Page 32

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PC367N2TJOOF

Manufacturer Part Number
PC367N2TJOOF
Description
Manufacturer
Sharp Microelectronics
Datasheet
86
■ Infrared Emitting Diodes
*1 Radiant intensity mW/sr
OPTO
GL380*
GL381*
GL382*
GL480E00000F
GL4800E0000F
GL4100E0000F
GL560*
GL561*
GL537*
GL538*
GL610T*
GL100MN0MP
GL100MN1MP
GL100MN3MP
GL100MD1MP1
Model No.
2
2
2
2
2
2
2
2
(GL381, GL382)
GL380
(GL561)
GL560
Side-view flat type, epoxy resin
ø3 epoxy resin
ø3 epoxy resin, for high speed
signal transmission:12 MHz
Epoxy resin with lens
ø5 epoxy resin
Leadless chip type
Surface mounting leadless type,
epoxy resin board with lens
Surface mounting leadless type,
epoxy resin board with lens,
high output type
Surface mounting leadless type,
epoxy resin board with lens,
high output type
Surface mounting leadless type,
epoxy resin board with lens,
wide beam angle
Package, features
*2 Handled by the LED division.
GL480E00000F
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in
equipment using any SHARP devices shown in catalogs, data books, etc.
Except where specially indicated, models listed on this page comply with the RoHS Directive*. For details, please contact SHARP.
*RoHS Directive: Prohibits use of lead, cadmium, hexavalent chromium, mercury and specific brominated flame retardants
Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(GL538)
(mA)
GL537
100
100
100
100
60
60
60
50
50
50
50
50
50
50
50
I
F
Absolute maximum ratings
V
(V)
6
6
4
6
6
6
6
6
6
6
6
6
6
6
6
R
(PBBs and PBDEs), with certain exceptions.
(mW)
150
150
150
150
150
150
150
75
75
75
75
75
75
75
P
–25 to +85
–25 to +85
–25 to +85
–25 to +85
–25 to +85
–25 to +85
–25 to +85
–25 to +85
–25 to +85
–25 to +85
–25 to +85
–30 to +85
–30 to +85
–30 to +85
–30 to +85
Topr
(°C)
GL4800E0000F
MIN.
4.5*
8.5*
3.0*
12*
15*
INFRARED EMITTING DIODES
Radiant flux Φe (mW)
0.7
0.7
1.0
5*
6*
0.7
1.0
2.0
GL610T
6
1
1
1
1
1
1
1
(MAX.)
(MAX.)
(MAX.)
6.0*
TYP.
11*
20*
14*
25*
13*
30*
1.6
3.0
6.0
6.0
18
2
1
1
1
1
1
1
1
(mA)
50
50
50
20
20
20
50
50
50
50
20
20
20
20
20
I
F
TYP.
1.25
1.25
1.25
1.3
1.3
1.5
1.2
1.2
1.2
1.3
1.3
1.3
1.2
1.2
GL100MN1MP, GL100MN3MP,
GL100MD1MP1
V
MAX.
1.37
1.37
F
1.5
1.5
1.7
1.4
1.4
1.4
1.5
1.5
1.5
1.4
1.5
1.5
1.5
GL100MN0MP
(V)
GL4100E0000F
(mA)
50
50
50
20
20
20
50
50
50
50
50
20
20
20
20
I
F
TYP.
±13
±13
±17
±13
±30
±90
±21
±13
±25
±13
±60
±10
±10
±80
∆θ
(°)
±9
(Ta = 25°C)
(nm)
TYP.
950
950
880
950
950
950
940
940
950
950
950
940
940
940
940
λp

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