PC367N2TJOOF Sharp Microelectronics, PC367N2TJOOF Datasheet - Page 19

• Manufacturer Part Number: PC367N2TJOOF
• Manufacturer: Sharp Microelectronics

◆Darlington phototransistor output
<Case type>
❇ Topr: –25 to +85 °C
◆OPIC type
<Compact type>
❇ Topr = –25 to +85°C
OPTO
GP1L50J0000F
GP1L51J0000F
GP1L52VJ000F
GP1L53VJ000F
GP1L57J0000F
GP1A98HCZ0F
Model No.
Model No.
GP1L50J0000F
(
“OPIC” (Optical IC) is a trademark of SHARP Corporation. An OPIC consists of a
light-detecting element and signal-processing circuit integrated onto a single chip.
connection
diagram
Internal
connection
diagram
Internal
Voltage
regulator
Amplifier
High sensitivity, both-side mounting type
High sensitivity, side mounting type
High sensitivity, PWB mounting type
High sensitivity, PWB mounting type
High sensitivity, wide gap, PWB mounting type
GP1L51J0000F
Compact, PWB mounting
Features
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in
equipment using any SHARP devices shown in catalogs, data books, etc.
Except where specially indicated, models listed on this page comply with the RoHS Directive*. For details, please contact SHARP.
*RoHS Directive: Prohibits use of lead, cadmium, hexavalent chromium, mercury and specific brominated flame retardants
Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
PHOTOINTERRUPTERS (TRANSMISSIVE TYPE)
Features
(PBBs and PBDEs), with certain exceptions.
GP1L52VJ000F
GP1A98HCZ0F
Detecting
emitting
(mm)
and
gap
3.2
Slit width
(mm)
0.5
Detecting
emitting
(mm)
10.0
and
gap
3.0
3.0
3.0
5.0
Threshold input current
MAX.
(mA)
I
FLH
8
)
Slit width
GP1L53VJ000F
(mm)
0.5
0.5
0.5
0.5
1.8
MAX.
(mA)
I
FHL
–
Current transfer ratio
CTR
MIN.
Electro-optical characteristics
3.3 to
(%)
50
50
50
30
70
V
24
(V)
CC
(mA)
Electro-optical characteristics
I
1
1
1
1
1
TYP.
F
t
(µs)
2.0
PLH
V
(V)
Propagation delay time
2
2
2
2
2
CE
TYP.
10.0
t
(µs)
PHL
GP1L57J0000F
TYP.
130
(µs)
80
80
80
80
tr
Response time
(mA)
10
I
(mA)
F
I
2
2
2
2
2
C
3.9 to
(kΩ)
(Ta = 25°C)
(Ta = 25°C)
R
20
100
100
100
100
100
(Ω)
R
L
L
to 24
V
V
(V)
3.3
(V)
CC
2
2
2
2
2
CE
73