PC367N2TJOOF Sharp Microelectronics, PC367N2TJOOF Datasheet - Page 30

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PC367N2TJOOF

Manufacturer Part Number
PC367N2TJOOF
Description
Manufacturer
Sharp Microelectronics
Datasheet
84
■ PIN Photodiodes
■ Laser Power Monitoring Photodiodes for Optical Disc System
*1 Visible light cut-off type
OPTO
PD410PI2E00F*
PD411PI2E00F
PD412PI2E00F
PD413PI2E00F*
PD60T*
PD100MC0MP
PD100MF0MP*
PD101SC0SS1F
PD102TS0MP0F
Model No.
Model No.
2
1
1
1
High response speed
(cut-off frequency: 400 MHz)
High response speed
(cut-off frequency: 400 MHz)
For blue-violet laser diode
(Light receiving sensitivity:
TYP. 0.25 A/W at λ = 405 nm)
PD411PI2E00F: transparent; PD412PI2E00F: transparent,
PD413PI2E00F
PIN type
PIN type
IrDA1.0
Chip device type
Surface mounting
leadless type
Surface mounting
leadless type
Features
Features
LASER POWER MONITORING PHOTODIODES FOR OPTICAL DISC SYSTEM
Visible light cut-off epoxy
resin with condenser (lens)
Transparent epoxy resin with
condenser (lens)
Transparent epoxy resin with
condenser (lens)
Visible light cut-off epoxy
resin with condenser (lens)
Transparent resin
Transparent epoxy resin
board with lens
Visible light cut-off epoxy
resin board with lens
PD410PI2E00F
*2 Handled by the LED division.
(Material)
Package
PD101SC0SS1F
Transparent epoxy resin
Silicon resin
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in
equipment using any SHARP devices shown in catalogs, data books, etc.
Except where specially indicated, models listed on this page comply with the RoHS Directive*. For details, please contact SHARP.
*RoHS Directive: Prohibits use of lead, cadmium, hexavalent chromium, mercury and specific brominated flame retardants
Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Material)
Package
(PBBs and PBDEs), with certain exceptions.
(mm
Active
area
3.31
3.31
3.31
3.31
2
)
Active area
(mm)
ø0.8
ø0.7
–25 to +85
–25 to +85
–25 to +85
–25 to +85
–25 to +85
–30 to +85
–30 to +85
Topr
(°C)
PD102TS0MP0F
–25 to +85
–40 to +80
Topr
(°C)
(TYP. 5.4)
PD60T
MIN. 4.5
TYP. 4
MIN.
(µA)
2.5
5.0
3.5
0.6
0.4
Isc
(mA)
TYP.
1 000 1 × 10
450
217
Isc
100
100
100
100
100
100
(Ix)
Ev
1 × 10
1 × 10
1 × 10
1 × 10
1 × 10
1 × 10
(PD100MF0MP: black)
µW/cm
Ee = 54
MAX.
(A)
Id
100
(Ix)
Ev
PD100MC0MP
–8
–8
–8
–8
–8
–8
–8
2
1.5 × 10
(V)
V
10
10
10
10
10
10
10
1 × 10
PIN PHOTODIODES /
R
MAX.
(A)
I
d
TYP.
0.25
0.01
0.01
(µs)
tr, tf
0.2
0.2
0.2
0.1
–9
–9
V
(V)
V
(V)
10
10
10
10
10
15
15
5
5
R
R
0.18
0.18
(kΩ)
(Ta = 25°C)
R
(Ta = 25°C)
1
1
1
1
1
L
(nm)
TYP.
820
760
λp
1 000
(nm)
TYP.
960
800
960
960
820
850
λp

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