Q67040-S4006-A2 SIEMENS [Siemens Semiconductor Group], Q67040-S4006-A2 Datasheet - Page 8

• Manufacturer Part Number: Q67040-S4006-A2
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Avalanche energy E
parameter:I
R
Drain-source breakdown voltage
V
V
Semiconductor Group
E
(BR)DSS
GS
AS
(BR)DSS
=25
mJ
60
40
30
20
10
65
61
59
57
55
53
51
49
V
0
-60
20
= (T
D
, L = 666 µH
=12.5 A,V
40
-20
j
)
60
AS
DD
20
= f (T
80
=25 V
j
)
100
60
120
100
140
°C
T
°C
T
j
j
180
180
8
Typ. gate charge
V
parameter: I
V
GS
GS
= (Q
16
12
10
V
8
6
4
2
0
0
Gate
2
D puls
)
4
0,2
= 12 A
6
V
DS max
8
10
12
14
0,8
BUZ 104 SL
16
29/Jan/1998
SPP13N05L
V
DS max
Q
nC
Gate
20