q67040-s4374 Infineon Technologies Corporation, q67040-s4374 Datasheet

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q67040-s4374

Manufacturer Part Number
q67040-s4374
Description
Silicon Carbide Schottky Diode
Manufacturer
Infineon Technologies Corporation
Datasheet
Silicon Carbide Schottky Diode
• Revolutionary semiconductor
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
• No forward recovery
Type
SDB20S30
Maximum Ratings, at T
Parameter
Continuous forward current,
RMS forward current,
Surge non repetitive forward current, sine halfwave
T
Repetitive peak forward current
T
Non repetitive peak forward current
t
i
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation, single diode mode,
Operating and storage temperature
Rev. 1.2
p
C
j
2
=10µs, T
=150°C, T
material - Silicon Carbide
the switching behavior
t value,
=25°C, t
C
p
C
=25°C
T
=10ms
C
=100°C, D=0.1
=25°C, t
Package
PG-TO263
p
=10ms
f=50Hz
j
= 25 °C, unless otherwise specified (per leg)
T
C
=100°C
Ordering Code
Q67040-S4374
T
C
=25°C
Page 1
1
Symbol
I
I
I
I
I
V
V
P
T
F
FRMS
FSM
FRM
FMAX
i
2
j ,
RRM
RSM
tot
dt
2
T
Marking
D20S30
thinQ!
stg
3
Product Summary
V
Q
I
SiC Schottky Diode
F
-55... +175
RRM
c
Value
100
300
300
6.5
10
14
36
45
65
PG-TO263
SDB20S30
2x10
2007-03-27
300
23
Unit
A
A²s
V
W
°C
V
nC
A

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q67040-s4374 Summary of contents

Page 1

... Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, single diode mode, Operating and storage temperature Rev. 1.2 1 Ordering Code Q67040-S4374 = 25 °C, unless otherwise specified (per leg) Symbol I =100° =25°C ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case (per leg) SMD version, device on PCB: @ min. footprint 2 P-TO263-3- cooling area Electrical Characteristics Parameter Static Characteristics Diode forward voltage =10A, T =25°C I ...

Page 3

Electrical Characteristics Parameter AC Characteristics 1) Total capacitive charge =200V, I =10A =-200A/µ Switching time =200V, I =10A =-200A/µ ...

Page 4

Power dissipation (per leg tot 100 120 140 3 Typ. forward characteristic (per ...

Page 5

Typ. reverse current vs. reverse voltage (per leg µ 100 150 7 Typ. capacitance vs. reverse voltage (per ...

Page 6

Typ. capacitive charge vs. current slope (per leg parameter 150 ° *0 ...

Page 7

Rev. 1.2 Page 7 SDB20S30 2007-03-27 ...

Page 8

Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...

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