q67040-s4276 Infineon Technologies Corporation, q67040-s4276 Datasheet
q67040-s4276
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q67040-s4276 Summary of contents
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Fast IGBT in NPT-technology • 40% lower E compared to previous generation off • Short circuit withstand time – 10 μs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - ...
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Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient = 25 °C, unless otherwise specified Electrical Characteristic Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate ...
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Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time ...
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T =80°C C 30A T =110°C C 20A I c 10A 0A 10Hz 100Hz 1kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency ≤ 150° 0. ...
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V =17V G E 15V 30A 13V 11V 9V 20A 7V 10A COLLECTOR EMITTER VOLTAGE CE Figure 5. Typical output characteristics (T = 25°C) j 50A 40A 30A T ...
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I , COLLECTOR CURRENT C Figure 9. Typical switching times as a function of collector current (inductive load 150° 800V, V ...
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E and E include losses on ts due to diode recovery. 12mJ 10mJ 8mJ 6mJ 4mJ 2mJ 0mJ 0A 10A 20A 30A I , COLLECTOR CURRENT C Figure 13. Typical switching energy losses as a function of collector ...
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Q , GATE CHARGE GE Figure 17. Typical gate charge (I = 15A) C μ μ μ μ 10V 11V 12V 13V V , ...
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Power Semiconductors PG-TO220-3-1 9 SGP15N120 SGW15N120 Rev. 2.5 Febr. 08 ...
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Power Semiconductors SGW15N120 PG-TO247-3 10 SGP15N120 Rev. 2.5 Febr. 08 ...
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Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SGP15N120 SGW15N120 i Figure C. Definition of diodes switching characteristics τ τ ...
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Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2/14/08. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ...