q67040-a4229-a2 ETC-unknow, q67040-a4229-a2 Datasheet

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q67040-a4229-a2

Manufacturer Part Number
q67040-a4229-a2
Description
Igbt With Antiparallel Diode Forward Voltage Drop High Switching Speed Tail Current Latch-up Free Including Fast Free-wheel Diode
Manufacturer
ETC-unknow
Datasheet
IGBT With Antiparallel Diode
Semiconductor Group
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Type
BUP 602D
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Diode forward current
T
Pulsed diode current, t
T
Power dissipation
T
Chip or operating temperature
Storage temperature
C
C
C
C
C
C
C
GE
= 25 °C
= 90 °C
= 25 °C
= 90 °C
= 90 °C
= 25 °C
= 25 °C
= 20 k
Preliminary data
p
= 1 ms
p
= 1 ms
V
600V
CE
I
36A
C
1
Package
TO-218 AB
Symbol
V
V
V
I
I
I
I
P
T
T
C
Cpuls
F
Fpuls
j
stg
CE
CGR
GE
tot
Pin 1
G
Ordering Code
Q67040-A4229-A2
- 55 ... + 150
- 55 ... + 150
Values
± 20
600
600
180
150
36
22
72
40
31
Pin 2
C
BUP 602D
Jul-31-1996
Unit
V
A
W
°C
Pin 3
E

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q67040-a4229-a2 Summary of contents

Page 1

... TO-218 AB Symbol CGR Cpuls Fpuls P tot stg 1 BUP 602D Pin 2 Pin 3 Pin Ordering Code Q67040-A4229-A2 Values Unit 600 V 600 ± 180 W 150 - 55 ... + 150 ° ... + 150 Jul-31-1996 ...

Page 2

Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage ...

Page 3

Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 300 Gon Rise time V = 300 ...

Page 4

Power dissipation tot C parameter: T 150 °C j 160 W P tot 120 100 Safe operating area ...

Page 5

Typ. output characteristics parameter µ ° 17V 15V I 13V C 30 11V ...

Page 6

Typ. switching time inductive load , T = 125° par 300 ± ...

Page 7

Typ. gate charge Gate parameter puls 100 Short circuit safe ...

Page 8

Typ. forward characteristics parameter =125° 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal impedance ...

Page 9

Package Outlines Dimensions in mm Weight: Semiconductor Group 9 BUP 602D Jul-31-1996 ...

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