q67040-s4013-a2 ETC-unknow, q67040-s4013-a2 Datasheet

q67040-s4013-a2

Manufacturer Part Number

q67040-s4013-a2

Description

Sipmos Power Transistor Channel Enhancement Mode Avalanche-rated Rated

Manufacturer

ETC-unknow

Datasheet

1.Q67040-S4013-A2.pdf (8 pages)

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SIPMOS

Semiconductor Group

• N channel

• Enhancement mode

• Avalanche-rated

• d v /d t rated

• 175°C operating temperature

Type

BUZ 101 S

Maximum Ratings

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

L = 372 µH, T

Avalanche current,limited by T

Avalanche energy,periodic limited by T

Reverse diode d v /d t

Gate source voltage

Power dissipation

jmax

= 22 A, V

= 25 °C

= 100 °C

= 25 °C

= 175 °C

Power Transistor

= 25 °C

= 40 V, d i

= 25 V, R

55 V

/d t = 200 A/µs

22 A

= 25

jmax

0.06

jmax

DS(on)

Preliminary data

Symbol

d v /d t

Dpuls

tot

Package

TO-220 AB

Pin 1

Values

Ordering Code

Q67040-S4013-A2

5.5

Pin 2

BUZ 101 S

SPP22N05

04/Nov/1997

Unit

kV/µs

Pin 3

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q67040-s4013-a2 Summary of contents

Page 1

... Preliminary data I R Package D DS(on 0.06 TO-220 AB Symbol Dpuls jmax AR E jmax tot 1 BUZ 101 S SPP22N05 Pin 1 Pin 2 Pin Ordering Code Q67040-S4013-A2 Values Unit 5.5 mJ kV/µ 04/Nov/1997 ...

Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...

Page 5

Power dissipation tot tot 100 120 140 Semiconductor Group Preliminary data Drain current I = ...

Page 6

Typ. output characteristics parameter µ 55W tot 0.0 0.5 1.0 1.5 2.0 ...

Page 7

Drain-source on-resistance (on) j parameter 0.20 0. (on) 0.14 0.12 0.10 98% 0.08 typ 0.06 0.04 0.02 0.00 -60 - ...

Page 8

Avalanche energy parameter: I =22A 372µH GS 100 ...

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