q67040-a4221-a2 ETC-unknow, q67040-a4221-a2 Datasheet

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q67040-a4221-a2

Manufacturer Part Number
q67040-a4221-a2
Description
Igbt With Antiparallel Diode Forward Voltage Drop High Switching Speed Tail Current Latch-up Free Including Fast Free-wheel Diode
Manufacturer
ETC-unknow
Datasheet
1.Q67040-A4221-A2.pdf (7 pages)
IGBT With Antiparallel Diode
Type
BUP 307D
Semiconductor Group
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Diode forward current
T
Pulsed diode current, t
T
Power dissipation
T
Chip or operating temperature
Storage temperature
C
C
C
C
C
C
C
GE
= 25 °C
= 90 °C
= 25 °C
= 90 °C
= 90 °C
= 25 °C
= 25 °C
= 20 k
Preliminary data
p
= 1 ms
p
= 1 ms
V
1200V 35A
CE
I
C
1
Package
TO-218 AB
Symbol
V
V
V
I
I
I
I
P
T
T
C
Cpuls
F
Fpuls
j
stg
CE
CGR
GE
tot
Pin 1
G
Ordering Code
Q67040-A4221-A2
-55 ... + 150
-55 ... + 150
Values
± 20
1200
1200
108
300
35
23
70
46
18
Pin 2
C
BUP 307D
Dec-02-1996
Unit
V
A
W
°C
Pin 3
E

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q67040-a4221-a2 Summary of contents

Page 1

... TO-218 AB Symbol CGR Cpuls Fpuls P tot stg 1 BUP 307D Pin 1 Pin 2 Pin Ordering Code Q67040-A4221-A2 Values Unit 1200 V 1200 ± 108 W 300 -55 ... + 150 °C -55 ... + 150 Dec-02-1996 ...

Page 2

Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage ...

Page 3

Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...

Page 4

Power dissipation tot C parameter: T 150 °C j 320 W P tot 240 200 160 120 Safe operating area ...

Page 5

Typ. output characteristics ( ) parameter µ 125 ° Typ. saturation characteristics CE(sat) GE parameter °C j ...

Page 6

Typ. gate charge Gate parameter puls 400 100 120 140 ...

Page 7

Typ. switching time inductive load 125 ° parameter 600 Typ. forward characteristics parameter ...

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