P4C163 PYRAMID [Pyramid Semiconductor Corporation], P4C163 Datasheet - Page 2

• Manufacturer Part Number: P4C163
• Description: ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

CAPACITANCES
(V
MAXIMUM RATINGS
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
Document # SRAM120 REV C
Symbol
C
Symbol
V
V
T
Grade
Military
Symbol
CC
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
IN
CC
TERM
A
V
V
V
V
V
V
V
V
V
I
I
LI
LO
IH
IL
HC
LC
CD
OL
OLC
OH
OHC
= 5.0V, T
P4C163/163L
(2)
Input Capacitance
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output Low Voltage
(CMOS Load)
Output High Voltage
(TTL Load)
Output High Voltage
(CMOS Load)
Input Leakage Current
Output Leakage Current
–55 to +125°C
A
Temperature
Parameter
= 25°C, f = 1.0MHz)
Parameter
Parameter
Ambient
(4)
(1)
Conditions Typ. Unit
V
IN
GND
0V
= 0V
–55 to +125
–0.5 to +7
V
–0.5 to
Value
CC
V
V
I
I
I
I
V
V
V
OL
OLC
OH
OHC
CC
CC
IN
CC
OUT
+0.5
5.0V ± 10%
= +8 mA, V
= –4 mA, V
= GND to V
= +100 µA, V
= Max.
= Max., CE = V
= –100 µA, V
= Min., I
= GND to V
5
Test Conditions
V
CC
Unit
°C
pF
V
V
IN
CC
CC
= –18 mA
CC
(2)
CC
= Min.
= Min.
CC
CC
IH
= Min.
= Min.
,
2. Extended temperature operation guaranteed with 400 linear feet per
3. Transient inputs with V
4. This parameter is sampled and not 100% tested.
Symbol
C
Symbol
T
T
P
I
Grade
Commercial
OUT
minute of air flow.
–100mA, respectively, are permissible for pulse widths up to 20 ns.
BIAS
STG
T
OUT
Mil.
Com’l.
Mil.
Com’l.
(2)
Output Capacitance
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
V
V
–0.5
–0.5
CC
CC
Min
–10
–10
2.2
2.4
Parameter
–5
–5
Parameter
–0.2 V
–0.2
Temperature
0°C to +70°C
P4C163
(3)
(3)
Ambient
IL
V
and I
CC
CC
Max
–1.2
+10
+10
0.8
0.2
0.4
0.2
+5
+5
+0.5
+0.5
IL
not more negative than –3.0V and
V
V
Conditions Typ. Unit
–0.5
–0.5
V
CC
CC
Min
N/A
N/A
GND
2.2
2.4
–5
–5
OUT
–0.2 V
–0.2
0V
P4C163L
(3)
(3)
–55 to +125
–65 to +150
= 0V
Value
V
1.0
50
CC
CC
Max
–1.2
5.0V ± 10%
N/A
N/A
0.8
0.2
0.4
0.2
Page 2 of 12
+5
+5
+0.5
+0.5
7
V
CC
Unit
Unit
µA
µA
mA
pF
°C
°C
W
V
V
V
V
V
V
V
V
V