P4C1041 PYRAMID [Pyramid Semiconductor Corporation], P4C1041 Datasheet - Page 2

• Manufacturer Part Number: P4C1041
• Description: HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
Document # SRAM133 REV OR
MAXIMUM RATINGS
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Industrial
Symbol
Commercial
Symbol
V
V
T
Grade(2)
A
CC
TERM
V
V
V
I
V
I
I
I
LO
SB1
P4C1041
LI
SB
OH
OL
IH
IL
Standby Power Supply
Current
(CMOS Input Levels)
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
Operating Temperature
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Standby Power Supply
Current (TTL Input Levels)
Output Low Voltage
(TTL Load)
Output High Voltage
(TTL Load)
–40°C to +85°C
Parameter
Temperature
0°C to +70°C
Ambient
Parameter
(1)
GND
0V
0V
–0.5 to +7.0
–55 to +125
V
–0.5 to
V
V
CE ≥ V
V
f = Max., Outputs Open
V
CE ≥ V
V
f = 0, Outputs Open
V
V
Value
V
CE = V
V
I
CC
I
OL
OH
CC
IN
CC
IN
CC
IN
IN
CC
OUT
+0.5
= +8 mA, V
= Max,
= Max,
= GND to V
≥ V
≥ V
≤ 0.3V
= –4 mA, V
5.0V ± 10%
5.0V ± 10%
= Max.
= Max.,
= GND to V
IH
IH
CC
CC
Test Conditions
IH
V
or V
,
CC
- 0.2V
- 0.3V or
Unit
°C
IN
V
V
≤ V
CC
CC
CC
CC
= Min.
IL
= Min.
(2)
CAPACITANCES
V
Symbol
T
T
I
Symbol
OUT
BIAS
STG
CC
C
C
= 5.0V, T
OUT
IN
Input Capacitance
Output Capacitance
Temperature Under
Bias
Storage Temperature
DC Output Current
Parameter
A
Parameter
= 25°C, f = 1.0MHz
(4)
Conditions
–0.5
V
Min
___
V
2.2
2.4
___
-2
-1
OUT
IN
P4C1041
(3)
–55 to +125
–65 to +150
= 0V
= 0V
Value
V
20
CC
Max
0.8
0.4
+2
+1
Page 2 of 10
40
6
Typ.
+0.5
8
8
Unit
Unit
Unit
mA
mA
µA
µA
mA
pF
pF
V
V
°C
°C
V
V