P4C1023 PYRAMID [Pyramid Semiconductor Corporation], P4C1023 Datasheet - Page 4

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P4C1023

Manufacturer Part Number
P4C1023
Description
LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM
Manufacturer
PYRAMID [Pyramid Semiconductor Corporation]
Datasheet
Document # SRAM126 REV OR
READ CYCLE NO. 1 (OE
READ CYCLE NO. 2 (ADDRESS CONTROLLED)
Notes:
1. WE is HIGH for READ cycle.
2. CE and OE are LOW for READ cycle.
3. ADDRESS must be valid prior to, or coincident with later of
READ CYCLE NO. 3 (CE
CE transition LOW.
P4C1023/P4C1023L
OE
OE
OE
OE CONTROLLED)
CE
CE
CE CONTROLLED)
CE
(1)
4. Transition is measured ± 200 mV from steady state voltage prior
5. READ Cycle Time is measured from the last valid address to the
to change, with loading as specified in Figure 1. This parameter
is sampled and not 100% tested.
first transitioning address.
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