HGTG18N120BND_07 FAIRCHILD [Fairchild Semiconductor], HGTG18N120BND_07 Datasheet - Page 5

• Manufacturer Part Number: HGTG18N120BND_07
• Description: 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2007 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
200
150
100
40
35
30
25
20
15
350
300
250
200
150
100
50
0
5
6
5
R
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
G
FIGURE 13. TRANSFER CHARACTERISTIC
= 3Ω, L = 1mH, V
I
CE
7
V
10
EMITTER CURRENT
EMITTER CURRENT
10
GE
T
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
J
= 25
= 12V, V
V
, COLLECTOR TO EMITTER CURRENT (A)
T
GE
8
C
o
15
= 150
, GATE TO EMITTER VOLTAGE (V)
C, T
15
GE
9
CE
J
o
= 150
C
V
= 15V, T
T
= 960V
GE
C
CE
20
T
20
J
= 25
10
= 12V, V
o
= 25
= 20V
C, V
R
o
J
G
C
o
= 25
GE
11
C, T
= 3Ω, L = 1mH, V
25
25
GE
= 12V
T
o
J
C
C
= 150
= 15V, T
= -55
12
Unless Otherwise Specified (Continued)
30
30
o
o
C, V
C
13
J
= 150
GE
CE
35
35
= 15V
= 960V
14
HGTG18N120BND
o
C
40
40
15
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
20
15
10
225
175
125
120
100
250
200
150
100
5
0
75
80
60
40
20
50
25
0
0
5
5
I
G(REF)
R
R
FIGURE 14. GATE CHARGE WAVEFORMS
G
T
G
J
= 3Ω, L = 1mH, V
= 3Ω, L = 1mH, V
= 25
EMITTER CURRENT
CURRENT
= 2mA, R
10
I
10
I
CE
CE
V
o
, COLLECTOR TO EMITTER CURRENT (A)
CE
, COLLECTOR TO EMITTER CURRENT (A)
C, V
50
T
= 1200V
J
V
15
GE
15
L
CE
= 25
Q
= 33.3Ω, T
G
T
= 12V OR 15V
= 400V
J
, GATE CHARGE (nC)
o
= 150
C, T
CE
CE
T
20
J
20
= 960V
V
= 960V
J
= 25
o
CE
= 150
100
C
C, V
= 25
= 800V
o
C OR T
GE
o
25
25
C, V
o
C
= 12V OR 15V
GE
J
= 150
= 12V
30
30
HGTG18N120BND Rev.C
150
o
C, V
35
35
GE
= 15V
40
200
40