HGTG18N120BND_07 FAIRCHILD [Fairchild Semiconductor], HGTG18N120BND_07 Datasheet

HGTG18N120BND_07

Manufacturer Part Number

HGTG18N120BND_07

Description

54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Manufacturer

FAIRCHILD [Fairchild Semiconductor]

Datasheet

1.HGTG18N120BND_07.pdf (8 pages)

Current page: 1 of 8
Download datasheet (2Mb)

54A, 1200V, NPT Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

The HGTG18N120BND is a Non-Punch Through (NPT)

IGBT design. This is a new member of the MOS gated high

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low on-

state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49304.

Ordering Information

NOTE: When ordering, use the entire part number.

Symbol

HGTG18N120BND

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

PART NUMBER

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

TO-247

PACKAGE

Data Sheet

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

18N120BND

BRAND

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

Features

• 54A, 1200V, T

• 1200V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . . 140ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

March 2007

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

= 25

JEDEC STYLE TO-247

HGTG18N120BND

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

COLLECTOR

(FLANGE)

HGTG18N120BND Rev.C

4,587,713

4,644,637

4,801,986

4,883,767

= 150

Related parts for HGTG18N120BND_07

HGTG18N120BND_07 Summary of contents

Page 1

NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs ...

Page 2

Absolute Maximum Ratings T Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Electrical Specifications T C PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time Thermal Resistance Junction To Case NOTE: 3. Turn-Off ...

Page 4

Typical Performance Curves 150 3Ω 1mH 100 0. MAX1 d(OFF)I d(ON ...

Page 5

Typical Performance Curves 3Ω 1mH 960V 150 ...

Page 6

Typical Performance Curves 6 FREQUENCY = 1MHz 5 C IES OES C RES COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 0 10 ...

Page 7

Test Circuits and Waveforms L = 1mH R = 3Ω G FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When ...

Page 8

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build ...

Related keywords

HGTG18N120BND_07 datasheet
HGTG18N120BND_07 data sheet
HGTG18N120BND_07 pdf datasheet
HGTG18N120BND_07 component
HGTG18N120BND_07 part
HGTG18N120BND_07 distributor
HGTG18N120BND_07 RoHS
HGTG18N120BND_07 datasheet download