FDQ7238AS_08 FAIRCHILD [Fairchild Semiconductor], FDQ7238AS_08 Datasheet - Page 6

• Manufacturer Part Number: FDQ7238AS_08
• Description: Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Typical Characteristics : Q2
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDQ7238AS Q2.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without
SyncFET(FDS6670A).
Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.
diode reverse recovery characteristic.
Figure 12. FDQ7238AS SyncFET body
TIME : 12nS/div
TIME : 12nS/div
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power dissipated in the device.
0.00001
leakage versus drain-source voltage and
0.0001
Figure 14. SyncFET body diode reverse
0.001
0.01
0.1
0
5
temperature.
V
DS
10
, REVERSE VOLTAGE (V)
T
T
T
A
A
A
= 100
= 125
= 25
15
o
o
C
o
C
C
20
FDQ7238AS Rev A 1(X)
25
30