FDQ7238AS_08 FAIRCHILD [Fairchild Semiconductor], FDQ7238AS_08 Datasheet

FDQ7238AS_08

Manufacturer Part Number

FDQ7238AS_08

Description

Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package

Manufacturer

FAIRCHILD [Fairchild Semiconductor]

Datasheet

1.FDQ7238AS_08.pdf (9 pages)

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Absolute Maximum Ratings

Thermal Characteristics

Package Marking and Ordering Information

Symbol

FDQ7238AS

Dual Notebook Power Supply N-Channel PowerTrench

General Description

The FDQ7238AS is designed to replace two single SO-

8 MOSFETs in DC to DC power supplies. The high-side

switch (Q1) is designed with specific emphasis on

reducing switching losses while the low-side switch

(Q2) is optimized to reduce conduction losses using

Fairchild’s SyncFET

includes a patented combination of a MOSFET

monolithically integrated with a Schottky diode.

DSS

GSS

θJA

, T

Device Marking

SO-14

STG

FDQ7238AS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

pin 1

technology. The FDQ7238AS

Vin

- Continuous

- Pulsed

FDQ7238AS

Parameter

Device

= 25°C unless otherwise noted

(Note 1a & 1b)

(Note 1c & 1d)

(Note 1a & 1b)

(Note 1a)

Reel Size

13”

Features

•

Q2: 14 A, 30V. R

Q1: 11 A, 30V. R

±20

2.4

1.3

Tape width

−55 to +150

16mm

in SO-14 Package

DS(on)

= 8.7 mΩ @ V

= 10.5 mΩ @ V

= 13.2 mΩ @ V

= 16 mΩ @ V

±20

118

1.8

1.1

May 2008

FDQ7238AS Rev A1(X)

2500 units

Quantity

= 4.5V

= 10V

= 4.5V

= 10V

Units

°C/W

°C

Related parts for FDQ7238AS_08

FDQ7238AS_08 Summary of contents

Page 1

FDQ7238AS Dual Notebook Power Supply N-Channel PowerTrench General Description The FDQ7238AS is designed to replace two single SO- 8 MOSFETs power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown DSS Voltage ∆BV Breakdown Voltage DSS ∆T Temperature Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...

Page 3

Electrical Characteristics Symbol Parameter Switching Characteristics (Note 2) t Turn-On Delay Time d(on) t Turn-On Rise Time r t Turn-Off Delay Time d(off) t Turn-Off Fall Time f t Turn-On Delay Time d(on) t Turn-On Rise Time r t Turn-Off ...

Page 4

Typical Characteristics 10V 3.5V GS 6.0V 4. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 14A D V =10V GS 1.4 1.2 ...

Page 5

Typical Characteristics : 14A 10V DS 6 15V GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON ...

Page 6

Typical Characteristics : Q2 SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows ...

Page 7

Typical Characteristics 10V 4.0V GS 6.0V 4. 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 15. On-Region Characteristics. 1 11A D 1 10V ...

Page 8

Typical Characteristics 11A 10V GATE CHARGE (nC) g Figure 21. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 100ms 1s 1 ...

Page 9

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. ® ACEx FPS™ Build it Now™ F-PFS™ CorePLUS™ ...

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