SI8497DB-T2-E1 VISHAY [Vishay Siliconix], SI8497DB-T2-E1 Datasheet - Page 7

• Manufacturer Part Number: SI8497DB-T2-E1
• Description: P-Channel 30 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 63355
S11-1385-Rev. A, 11-Jul-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.1
0.1
1
1
10
10
-4
-4
0.2
0.1
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
0.02
Single Pulse
0.05
0.02
10
-3
0.05
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
This document is subject to change without notice.
10
-3
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
1
0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 85 °C/W
Vishay Siliconix
www.vishay.com/doc?91000
Si8497DB
1
0
10
0
www.vishay.com
0
-1
7