SI8497DB-T2-E1 VISHAY [Vishay Siliconix], SI8497DB-T2-E1 Datasheet - Page 5

• Manufacturer Part Number: SI8497DB-T2-E1
• Description: P-Channel 30 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 63355
S11-1385-Rev. A, 11-Jul-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
I
T
D
J
= 250 μA
25
- Temperature (°C)
T
J
0.6
50
= 150 °C
75
0.8
0.01
100
0.1
100
10
1
0.1
T
J
1.0
Safe Operating Area, Junction-to-Ambient
= 25 °C
This document is subject to change without notice.
* V
Limited by R
125
T
A
GS
= 25 °C
> minimum V
150
1.2
V
DS
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
at which R
BVDSS Limited
DS(on)
10
0.16
0.12
0.08
0.04
0.00
is specified
30
25
20
15
10
5
0
0.001
0
On-Resistance vs. Gate-to-Source Voltage
100 us
10 s
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
DC
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
2
Pulse (s)
1
3
10
Vishay Siliconix
T
J
www.vishay.com/doc?91000
= 25 °C
T
I
J
D
= 125 °C
Si8497DB
4
= 1.5 A
100
www.vishay.com
1000
5
5