SI8497DB-T2-E1 VISHAY [Vishay Siliconix], SI8497DB-T2-E1 Datasheet

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SI8497DB-T2-E1

Manufacturer Part Number
SI8497DB-T2-E1
Description
P-Channel 30 V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Based on T
Document Number: 63355
S11-1385-Rev. A, 11-Jul-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Ordering Information: Si8497DB-T2-E1 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditions
V
DS
- 30
(V)
Device Marking: 8497
Bump Side View
S
S
D
C
2
3
4
= 25 °C.
0.053 at V
0.071 at V
0.120 at V
R
DS(on)
G
S
D
MICRO FOOT
xxx = Date/Lot Traceability Code
1
6
5
GS
GS
GS
() Max.
c
= - 4.5 V
= - 2.5 V
= - 2.0 V
J
= 150 °C)
Backside View
P-Channel 30 V (D-S) MOSFET
I
D
- 13
- 11
- 5
(A)
This document is subject to change without notice.
d
A
Q
IR/Convection
= 25 °C, unless otherwise noted)
16.3 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Ultra-small 1.5 mm x 1 mm Maximum Outline
• Ultra-thin 0.59 Maximum Height
• Compliant to RoHS Directive 2002/95/EC
• Low On-Resistance Load Switch, Charger Switch,
Symbol
T
J
Definition
OVP Switch and Battery Switch for Portable
Devices
- Low Power Consumption
- Increased Battery Life
- Space Savings on PCB
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
stg
®
Power MOSFET
G
P-Channel MOSFET
- 55 to 150
- 5.9
- 4.7
- 2.3
2.77
1.77
Limit
± 12
- 30
- 13
- 10
- 20
- 11
260
8.4
13
a, b
a, b
a, b
a, b
a, b
S
D
Vishay Siliconix
www.vishay.com/doc?91000
Si8497DB
www.vishay.com
Unit
°C
W
V
A
1

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SI8497DB-T2-E1 Summary of contents

Page 1

... Device Marking: 8497 xxx = Date/Lot Traceability Code Ordering Information: Si8497DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... Si8497DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient c Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 85 °C/W. c. Case is defined as top surface of the package. SPECIFICATIONS ( °C, unless otherwise noted) ...

Page 3

... Test Conditions ° 1 1.5 A, dI/dt = 100 A/µ ° This document is subject to change without notice. Si8497DB Vishay Siliconix Min. Typ. Max. Unit - 0. www.vishay.com 3 www.vishay.com/doc?91000 ...

Page 4

... Si8497DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted thru 2 0 Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.16 0. 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 1 ...

Page 5

... A DC BVDSS Limited 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient This document is subject to change without notice. Si8497DB Vishay Siliconix 125 ° ° Gate-to-Source Voltage ( ...

Page 6

... Si8497DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 100 T - Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Square Wave Pulse Duration ( Square Wave Pulse Duration (s) This document is subject to change without notice. Si8497DB Vishay Siliconix Notes Duty Cycle ...

Page 8

... Si8497DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 6-BUMP ( 0.5 mm PITCH Recommended Land 8497 Mark on Backside of Die Notes (unless otherwise specified): 1. All dimensions are in millimeters. 2. Six (6) solder bumps are lead (Pb)-free 95.5Sn, 3.8Ag, 0.7Cu with diameter 0.30 to 0.32 mm. ...

Page 9

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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