SI8497DB-T2-E1 VISHAY [Vishay Siliconix], SI8497DB-T2-E1 Datasheet - Page 4

• Manufacturer Part Number: SI8497DB-T2-E1
• Description: P-Channel 30 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si8497DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.20
0.16
0.12
0.08
0.04
0.00
20
15
10
On-Resistance vs. Drain Current and Gate Voltage
10
5
0
8
6
4
2
0
0
0
0
I
D
= 1.5 A
5
0.5
V
V
GS
V
DS
DS
Output Characteristics
5
= 2 V
Q
- Drain-to-Source Voltage (V)
10
= 7.5 V
g
I
- Total Gate Charge (nC)
1
D
- Drain Current (A)
Gate Charge
15
V
1.5
GS
10
V
DS
= 2.5 V
20
= 15 V
V
V
GS
DS
2
V
= 5 V thru 2.5 V
= 24 V
25
GS
15
= 4.5 V
V
V
GS
2.5
GS
This document is subject to change without notice.
30
= 1.5 V
= 2 V
20
35
3
2400
2000
1600
1200
800
400
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
C
oss
5
0.5
V
V
C
Transfer Characteristics
T
DS
GS
0
iss
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
T
I
C
D
25
Capacitance
= 1.5 A; V
= 125 °C
1
T
I
D
C
50
15
= 1.5 A; V
= 25 °C
GS
1.5
= 2.5 V
I
D
75
S11-1385-Rev. A, 11-Jul-11
GS
= 0.5 A; V
20
T
Document Number: 63355
C
www.vishay.com/doc?91000
= 4.5 V
= - 55 °C
100
2
GS
25
125
= 2 V
150
2.5
30