SI8497DB-T2-E1 VISHAY [Vishay Siliconix], SI8497DB-T2-E1 Datasheet - Page 6

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SI8497DB-T2-E1

Manufacturer Part Number
SI8497DB-T2-E1
Description
P-Channel 30 V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Si8497DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
16
12
8
4
0
0
25
T
C
Current Derating*
- Case Temperature (°C)
50
D
is based on T
75
100
J(max)
125
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
This document is subject to change without notice.
150
15
12
9
6
3
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
100
S11-1385-Rev. A, 11-Jul-11
Document Number: 63355
www.vishay.com/doc?91000
125
150

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