SSD2007 FAIRCHILD [Fairchild Semiconductor], SSD2007 Datasheet - Page 2

• Manufacturer Part Number: SSD2007
• Description: Dual N-CHANNEL POWER MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

SSD2007A
Symbol
Symbol
Thermal Resistance
Electrical Characteristics
Notes ;
(1) T
(2) Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
Source-Drain Diode Ratings and Characteristics
R
BV
V
I
t
t
I
I
GS(th)
Q
Q
V
DS(on)
GSS
d(on)
d(off)
DSS
DON
g
Q
Symbol
I
t
t
t
S
rr
DSS
SD
fs
gd
r
f
gs
R
g
J
= 25
θJA
℃ to 150℃
Continuous Source Current
(Body Diode)
Diode Forward Voltage(2)
Reverse Recovery Time
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
On-State Drain-Source Current(2)
Static Drain-Source
On-State Resistance(2)
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Characteristic
Characteristic
Junction-to-Ambient
Characteristic
(T
A
=25℃ unless otherwise specified)
Min.
--
--
--
--
--
Typ.
--
--
--
--
--
Min.
600
2.0
8.0
--
--
--
--
--
--
--
--
--
--
--
--
Max. Units
100
1.8
1.2
Typ.
2.5
1.0
2.0
--
--
--
--
--
--
--
--
--
--
--
--
Max. Units
ns
A
-1.0
100
V
4.0
1.0
0.3
0.5
40
70
70
15
25
--
--
--
--
2
--
T
T
Modified MOSFET Symbol
Showing the Integral Reverse
P-N Junction Rectifier
Typ.
μA
J
J
μA
μA
nC
ns
=25℃,I
=25℃,I
Ω
--
V
V
A
S
V
V
V
V
V
V
V
V
V
V
V
Z
V
I
D
0
Test Condition
GS
DS
GS
GS
DS
DS
GS
GS
GS
DS
DD
DS
=1.3A
S
F
=6.0Ω,
=1.25A,V
=2.5A,di
= V
=50V
=40V,T
=25V,V
=0V,I
=20V
=-20V
=10V,V
=10V,I
=5.0V,I
=30V,I
≥15V,I
Test Condition
GS
Dual N-CHANNEL
POWER MOSFET
Max.
62.5
D
,I
=250μA
D
D
J
D
D
GS
F
DS
=1.5A
D
=0.6A,
=55℃
=0.6A
/dt=100A/μs
=250μA
GS
=2.0A
=5V
=10V,
=0V
○
─ ─ ─ ─
G
Units
℃/W
│ │ │ │
┘ ┘ ┘ ┘
│ │
│
│
│ │
│ │
│
│
│
│
◀
─ ─ ─ ─
─
─ │
─ ─
─ ─ ─ ─
│ │
│
│ │ │ │
│ │ │ │
│ │ │ │
○ D
○
─
─ ─
─
▲
S