SSD2007 FAIRCHILD [Fairchild Semiconductor], SSD2007 Datasheet
SSD2007
Manufacturer Part Number
SSD2007
Description
Dual N-CHANNEL POWER MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.SSD2007.pdf
(5 pages)
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Price
Part Number:
SSD2007ASTF
Manufacturer:
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Quantity:
20 000
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Part Number:
SSD2007ATF
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TI
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Quantity:
20 000
Dual N-CHANNEL POWER MOSFET
FEATURES
! Extremely Lower R
! Improved Inductive Ruggedness
! Fast Switching Times
! Rugged Polysilicon Gate Cell Structure
! Low Input Capacitance
! Extended Safe Operating Area
! Improved High Temperature Reliability
! Surface Mounding Package : 8SOP
Absolute Maximum Ratings
Notes ;
(1) T
(2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature
T
Symbol
J
V
V
V
I
P
, T
T
I
I
DM
DSS
DGR
J
GS
D
D
= 25
D
L
STG
℃ to 150℃
Drain-to-Source Voltage(1)
Drain-Gate Voltage(R
Gate-to-Source Voltage
Continuous Drain Current T
Continuous Drain Current T
Drain Current-Pulsed (2)
Total Power Dissipation T
Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/16” from case for 5 seconds
DS(ON)
Characteristic
GS
=1.0MΩ)(1)
T
A
A
=25℃
=70℃
A
A
=25℃
=100℃
8 SOP
G
1
,G
- 55 to +150
2
S
G
S
G
N-Channel MOSFET
1
2
1
2
Value
300
±20
SSD2007A
2.0
1.6
8.0
2.0
1.3
50
50
▼
▼
1
2
3
4
D
Top View
1
,D
2
S
1
,S
2
D
▼
8
7
6
5
1
,D
2
D
D
D
D
Units
1
1
2
2
℃
V
V
V
W
A
A
V
Rev. A
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SSD2007 Summary of contents
Page 1
... L Purposes, 1/16” from case for 5 seconds Notes ; ℃ to 150℃ ( (2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature Characteristic =1.0MΩ)(1) GS =25℃ A =100℃ A =25℃ =70℃ A SSD2007A 8 SOP ...
Page 2
... SSD2007A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS V Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS I On-State Drain-Source Current(2) DON Static Drain-Source R DS(on) On-State Resistance(2) g Forward Transconductance fs t Turn-On Delay Time d(on) t Rise Time r t Turn-Off Delay Time ...
Page 3
... Fig 4. Capacitance vs. Drain-Source Voltage Fig 6. Nomalized On-Resistance vs. Temperature SSD2007A Gate-Source Voltage [ iss ...
Page 4
... SSD2007A Fig 7. Nomalized Effective Transient Thermal Impedance, Junction-to-Amdient 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 0. Fig 8. Source-Drain Diode Forward Voltage Source-Drain Voltage [V] SD Fig 10. Threshold Voltage ...
Page 5
CROSSVOLT â â â â Rev. H5 ...