K4T1G084QD SAMSUNG [Samsung semiconductor], K4T1G084QD Datasheet - Page 24
K4T1G084QD
Manufacturer Part Number
K4T1G084QD
Description
1Gb D-die DDR2 SDRAM Specification
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4T1G084QD.pdf
(27 pages)
K4T1G084QD
K4T1G164QD
For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS(base) and tDH(base) value to the
∆tDS and ∆tDH derating value respectively. Example: tDS (total setup time) = tDS(base) + ∆tDS.
Slew
V/ns
rate
DQ
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
∆tDS
188
146
63
1
2.0 V/ns
-
-
-
-
-
-
∆tDS1, ∆tDH1 Derating Values for DDR2-400, DDR2-533(All units in ‘ps’; the note applies to the entire table)
∆tDH
188
167
125
1
-
-
-
-
-
-
∆tDS
167
125
42
31
1
1.5 V/ns
-
-
-
-
-
∆tDH
146
125
83
69
1
-
-
-
-
-
∆tDS
125
-11
-25
83
1
0
1.0 V/ns
-
-
-
-
∆tDH
-14
-31
63
42
1
0
-
-
-
-
∆tDS
-13
-27
-45
81
-2
1
0.9 V/ns
-
-
-
-
DQS Single-ended Slew Rate
22 of 29
∆tDH
-13
-30
-53
43
1
1
-
-
-
-
∆tDS
-18
-32
-50
-74
-7
1
0.8 V/ns
-
-
-
-
∆tDH
-13
-27
-44
-67
-96
1
-
-
-
-
∆tDS
-128
-29
-43
-61
-85
0.7 V/ns
1
-
-
-
-
∆tDH
-114
-156
-45
-62
-85
1
-
-
-
-
∆tDS
-102
-145
-210
-60
-78
1
0.6 V/ns
-
-
-
-
∆tDH
-109
-138
-180
-243
-86
1
-
-
-
-
Rev. 1.0 March 2007
DDR2 SDRAM
∆tDS
-108
-138
-175
-240
1
0.5 V/ns
-
-
-
-
-
∆tDH
-152
-181
-223
-286
1
-
-
-
-
-
∆tDS
-183
-226
-291
1
0.4 V/ns
-
-
-
-
-
-
∆tDH
-246
-288
-351
1
-
-
-
-
-
-