K4T1G084QD SAMSUNG [Samsung semiconductor], K4T1G084QD Datasheet - Page 10

• Manufacturer Part Number: K4T1G084QD
• Description: 1Gb D-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

5.0 DDR2 SDRAM Addressing
K4T1G084QD
K4T1G164QD
1Gb Addressing
* Reference information: The following tables are address mapping information for other densities.
256Mb
512Mb
2Gb
4Gb
Column Address/page size
Column Address
Column Address
Column Address
Column Address
Auto precharge
Auto precharge
Auto precharge
Auto precharge
Auto precharge
Configuration
Configuration
Configuration
Configuration
Configuration
Bank Address
Bank Address
Bank Address
Bank Address
Bank Address
Row Address
Row Address
Row Address
Row Address
Row Address
# of Bank
# of Bank
# of Bank
# of Bank
# of Bank
A0 ~ A9,A11
A0 ~ A9,A11
A
A
A0 - A9,A11
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
256Mb x4
512Mb x4
128Mb x4
A0 ~ A14
A
0
A0 ~ A13
64Mb x4
BA0,BA1
A
BA0,BA1
A0 - A15
0
1 Gb x4
A10/AP
A
A
A10/AP
A10/AP
0
~ A
0
~ A
10
10
~ A
~ A
8
8
4
8
4
/AP
/AP
9,
9,
13
A
12
A
11
11
8 of 29
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
256Mb x 8
512Mb x 8
128Mb x 8
A0 ~ A14
32Mb x 8
64Mb x 8
A
BA0,BA1
A
BA0,BA1
A0 ~ A13
A0 - A15
A0 ~ A9
A
A
A0 ~ A9
A10/AP
A10/AP
A
A10/AP
A0 - A9
A
0
0
0
10
0
10
~ A
~ A
8
~ A
~ A
8
8
4
4
/AP
/AP
13
9
12
9
Rev. 1.0 March 2007
DDR2 SDRAM
128Mb x16
256Mb x16
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
64Mb x16
16Mb x16
32Mb x16
A0 ~ A13
BA0,BA1
BA0,BA1
A0 ~ A12
A0 - A14
A
A
A
A0 ~ A9
A0 ~ A9
A10/AP
A
A10/AP
A0 - A9
A
A
A10/AP
0
0
0
0
10
10
~ A
~ A
~ A
8
8
8
~ A
4
4
/AP
/AP
12
12
9
8