K4T1G084QD SAMSUNG [Samsung semiconductor], K4T1G084QD Datasheet - Page 20

• Manufacturer Part Number: K4T1G084QD
• Description: 1Gb D-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T1G084QD
K4T1G164QD
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE asyn-
chronously drops LOW
Parameter
t
t
t
t
t
t
t
tANPD
tAXPD
tOIT
tDelay
CKE
AOND
AON
AONPD
AOFD
AOF
AOFPD
Symbol
tAC(min)+
tAC(min)+
tAC(min)
tAC(min)
tIS+tCK
+tIH
min
2.5
3
2
2
2
3
8
0
DDR2-800
tAC(max)
tAC(max)
tAC(max)
tAC(max)
2.5tCK +
2tCK +
+ 0.7
+ 0.6
max
18 of 29
2.5
+1
+1
12
2
tAC(min)+
tAC(min)+
tAC(min)
tAC(min)
tIS+tCK
+tIH
min
2.5
3
2
2
2
3
8
0
DDR2-667
2tCK+tAC
tAC(max)
tAC(max)
2.5tCK+t
AC(max)
(max)+1
+ 0.6
max
+0.7
2.5
+1
12
2
tAC(min)+
tAC(min)+
tAC(min)
tAC(min)
tIS+tCK
min
+tIH
2.5
3
2
2
2
3
8
0
DDR2-533
tAC(max)
tAC(max)
tAC(max)
C(max)+
2tCK+tA
2.5tCK+
+ 0.6
max
2.5
+1
+1
12
2
1
tAC(min)+
tAC(min)+
tAC(min)
tAC(min)
tIS+tCK
Rev. 1.0 March 2007
+tIH
min
2.5
3
2
2
2
3
8
0
DDR2 SDRAM
DDR2-400
2tCK+tAC
tAC(max)
tAC(max)
tAC(max)
(max)+1
2.5tCK+
+ 0.6
max
2.5
+1
+1
12
2
Units
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
Notes
13, 25
36
26
24