AM41DL6408H8H70IS AMD [Advanced Micro Devices], AM41DL6408H8H70IS Datasheet - Page 62

• Manufacturer Part Number: AM41DL6408H8H70IS
• Description: Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
• Manufacturer: AMD [Advanced Micro Devices]

SRAM DATA RETENTION
Notes:
1. CE1#s ≥ V
2. Typical values are not 100% tested.
60
Parameter
Symbol
t
t
V
I
SDR
RDR
DR
DR
V
2.7 V
CE2s
V
0.4 V
GND
V
2.7V
2.2V
V
CE1#s
GND
DR
CC
CC
DR
CC
– 0.2 V, CE2s ≥ V
Parameter Description
V
Data Retention Current
Data Retention Set-Up Time
Recovery Time
CC
for Data Retention
Figure 34. CE1#s Controlled Data Retention Mode
Figure 35. CE2s Controlled Data Retention Mode
CC
A D V A N C E
– 0.2 V (CE1#s controlled) or CE2s ≤ 0.2 V (CE2s controlled), CIOs = V
t
SDR
t
SDR
Test Setup
CS1#s ≥ V
V
(Note 1)
See data retention waveforms
CC
Am41DL6408H
= 3.0 V, CE1#s ≥ V
I N F O R M A T I O N
Data Retention Mode
Data Retention Mode
CC
CE1#s
CE2s < 0.2 V
– 0.2 V (Note 1)
≥
V
CC
CC
- 0.2 V
– 0.2 V
Min
1.5
t
RC
0
t
RDR
t
RDR
(Note 2)
Typ
1.0
November 24, 2003
SS
Max
3.3
15
or V
CC
.
Unit
µA
ns
ns
V