AM41DL6408H8H70IS AMD [Advanced Micro Devices], AM41DL6408H8H70IS Datasheet - Page 47
AM41DL6408H8H70IS
Manufacturer Part Number
AM41DL6408H8H70IS
Description
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
1.AM41DL6408H8H70IS.pdf
(66 pages)
- Current page: 47 of 66
- Download datasheet (2Mb)
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
November 24, 2003
JEDEC
t
t
t
t
t
t
t
WHWH1
WHWH1
WHWH2
t
t
t
t
t
t
t
t
WHDX
EHWH
WHEH
WLWH
DVWH
GHWL
WHDL
AVWL
WLAX
WLEL
ELWL
AVAV
Parameter
t
t
t
t
WHWH1
WHWH1
WHWH2
t
t
t
GHWL
t
t
OEPH
t
Std
t
SR/W
BUSY
t
t
t
t
t
t
WPH
t
ASO
t
t
t
VCS
t
AHT
WC
WH
DH
WS
CH
WP
AS
AH
DS
CS
RB
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE#f or OE# high
during toggle bit polling
Data Setup Time
Data Hold Time
Output Enable High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time (CE#f to WE#)
CE#f Setup Time
WE# Hold Time (CE#f to WE#)
CE#f Hold Time
Write Pulse Width
Write Pulse Width High
Latency Between Read and Write Operations
Programming Operation (Note 2)
Accelerated Programming Operation,
Word or Byte (Note 2)
Sector Erase Operation (Note 2)
V
Write Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
CC
Setup Time (Note 1)
A D V A N C E
Am41DL6408H
I N F O R M A T I O N
Word
Byte
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Min
Min
70, 71
70
40
40
30
Speed
0.4
15
20
30
50
90
0
0
0
0
0
0
0
0
0
5
7
4
0
85
85
45
45
35
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ns
ns
45
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