M36L0R8060B1ZAQE STMICROELECTRONICS [STMicroelectronics], M36L0R8060B1ZAQE Datasheet - Page 9

• Manufacturer Part Number: M36L0R8060B1ZAQE
• Description: 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

FUNCTIONAL DESCRIPTION
The PSRAM and Flash memory components have
separate power supplies but share the same
grounds. They are distinguished by two Chip En-
able inputs: E
the PSRAM.
Recommended operating conditions do not allow
more than one device to be active at a time. The
Figure 4. Functional Block Diagram
A0-A21
F
for the Flash memory and E
L
K
A22-A23
WP
RP
E
G
W
CR
UB
LB
E
W
G
P
P
F
P
P
F
F
F
F
P
P
V
DDF
V
P
CCP
256 Mbit
for
Memory
PSRAM
64 Mbit
V
Flash
DDQF
most common example is simultaneous read oper-
ations on one of the Flash memory and the
PSRAM components which would result in a data
bus contention. Therefore it is recommended to
put the other devices in the high impedance state
when reading the selected device.
V
PPF
V
SS
M36L0R8060T1, M36L0R8060B1
WAIT
DQ0-DQ15
AI09314b
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