M36L0R8060B1ZAQE STMICROELECTRONICS [STMicroelectronics], M36L0R8060B1ZAQE Datasheet - Page 13

• Manufacturer Part Number: M36L0R8060B1ZAQE
• Description: 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 6. Flash Memory DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
I
Symbol
I
DD6
I
I
I
DD5
DD7
PP1
PP3
I
I
I
I
I
I
DD1
DD2
DD3
DD4
PP2
I
LO
LI
2. V
(1,2)
(1)
(1)
(1)
(1)
DD
Input Leakage Current
Output Leakage Current
Supply Current
Asynchronous Read (f=5MHz)
Supply Current
Synchronous Read (f=54MHz)
Supply Current
(Reset)
Supply Current (Standby)
Supply Current (Automatic Standby)
Supply Current (Program)
Supply Current (Erase)
Supply Current
(Dual Operations)
Supply Current Program/ Erase
Suspended (Standby)
V
V
V
V
Dual Operation current is the sum of read and program or erase currents.
PP
PP
PP
PP
Supply Current (Program)
Supply Current (Erase)
Supply Current (Read)
Supply Current (Standby)
Parameter
Synchronous Read (Continuous
Asynchronous Read in another
Program/Erase in one Bank,
Program/Erase in one Bank,
f=54MHz) in another Bank
0V
E =
E =
0V
RP = V
E = V
E = V
Test Condition
V
V
V
V
Continuous
V
V
V
V
V
V
V
V
V
16 Word
PP
PP
PP
PP
V
4 Word
8 Word
PP
PP
PP
PP
PP
PP
OUT
DDQF
DDQF
K=V
K=V
IN
Bank
IL
IL
= V
= V
= V
= V
SS
, G = V
, G = V
= V
= V
= V
= V
ss
ss
V
V
V
± 0.2V
PPH
PPH
PPH
PPH
DD
DD
DD
DD
DD
DD
V
± 0.2V
± 0.2V
DDQF
DDQF
IH
IH
M36L0R8060T1, M36L0R8060B1
Typ
0.2
0.2
0.2
0.2
13
16
18
23
25
50
50
50
10
10
23
35
50
8
8
2
2
Max
110
110
110
110
±1
±1
15
18
20
25
27
20
25
20
25
40
52
5
5
5
5
5
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
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