M36L0R8060B1ZAQE STMICROELECTRONICS [STMicroelectronics], M36L0R8060B1ZAQE Datasheet - Page 11
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M36L0R8060B1ZAQE
Manufacturer Part Number
M36L0R8060B1ZAQE
Description
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.M36L0R8060B1ZAQE.pdf
(18 pages)
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
Table 3. Absolute Maximum Ratings
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK ® 7191395 specification,
V
DDF
Symbol
t
T
T
T
V
VPPFH
V
,
LEAD
V
BIAS
T
STG
CCP
PPF
I
V
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
O
IO
A
DDQF
,
Ambient Operating Temperature
Temperature Under Bias
Storage Temperature
Lead Temperature During Soldering
Input or Output Voltage
Core and Input/Output Supply Voltages
Flash Program Voltage
Output Short Circuit Current
Time for V
PPF
at V
Parameter
PPFH
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
–0.5
–0.2
–0.2
Min
–25
–25
–65
M36L0R8060T1, M36L0R8060B1
Value
V
DDQ
Max
12.6
100
100
2.45
125
(1)
85
85
+ 0.3
hours
Unit
mA
°C
°C
°C
°C
V
V
V
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