M36L0R8060B1ZAQE STMICROELECTRONICS [STMicroelectronics], M36L0R8060B1ZAQE Datasheet - Page 14

• Manufacturer Part Number: M36L0R8060B1ZAQE
• Description: 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M36L0R8060T1, M36L0R8060B1
Table 7. Flash Memory DC Characteristics - Voltages
Table 8. PSRAM DC Characteristics
Note: 1. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current required to
14/18
Symbol
I
I
Symbol
I
I
CC1P
I
CC3W
CC3R
CC1
CC2
V
I
V
V
V
V
V
SB
V
V
V
V
I
V
V
I
V
PPLK
I
PPH
LKO
RPH
LO
ZZ
PP1
OH
LI
OL
OH
OL
IH
IL
IH
IL
(2)
2. I
3. The Operating Temperature is +25°C.
(1)
(1)
(1)
(1)
(1)
drive the output capacitance expected in the actual system.
ature compensated refresh threshold at +85°C). In order to achieve low standby current, all inputs must be driven either to V
or V
SB
V
Input Leakage Current
Output Leakage Current
Deep-Power Down
Current
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
(Max) values are measured with RCR2 to RCR0 bits set to ‘000’ (full array refresh) and RCR6 to RCR5 bits set to ‘11’ (temper-
Asynchronous Random
Continuous Burst Read
SS
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
Program or Erase Lockout
V
RP pin Extended High Voltage
Continuous Burst Write
CC
V
PP
DD
Asynchronous Page
.
PP
Operating Current:
Operating Current:
Operating Current:
Operating Current:
Operating Current:
Burst Read/Write
Standby Current
Program Voltage-Logic
Lock Voltage
Initial Access,
Program Voltage Factory
Read/Write
Parameter
Read
Parameter
V
CC
I
OUT
E = V
=V
V
G = V
Test Condition
Program, Erase
Program, Erase
Test Condition
CC
0V
V
I
= 0mA
OH
IH
I
I
IN
I
OH
OL
OL
= V
IL
or V
= V
E = V
= –100µA
IH
= 100µA
,
= 0.2mA
= 0.2mA
V
CCQ
or E = V
IN
IH
IL
,
IH
or V
or 0V,
V
CC
IL
IH
80MHz
66MHz
80MHz
66MHz
80MHz
66MHz
70ns
70ns
V
V
DDQF
DDQF
Min
0.4
0.1
1.3
8.5
0
0.8V
Min.
–
–
1.4
0.2
CCQ
Typ
1.8
9.0
Typ
10
V
DDQF
V
Max
0.4
0.4
0.1
3.3
9.5
0.4
3.3
0.2V
CCQ
1
Max.
120
0.4
25
15
35
30
18
15
35
30
1
1
CCQ
+ 0.2
+
Unit
V
V
V
V
V
V
V
V
V
Unit
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
CCQ
V
V
V
V