FQD2N50B Fairchild Semiconductor, FQD2N50B Datasheet
FQD2N50B
Manufacturer Part Number
FQD2N50B
Description
Manufacturer
Fairchild Semiconductor
Specifications of FQD2N50B
Date_code
08+
©2000 Fairchild Semiconductor International
FQD2N50B / FQU2N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
= 25° C)
Parameter
G
T
D
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 1.6A, 500V, R
• Low gate charge ( typical 6.0 nC)
• Low Crss ( typical 4.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQU Series
I-PAK
FQD2N50 / FQU2N50
DS(on)
Typ
--
--
--
-55 to +150
= 5.3
0.24
120
300
500
1.6
1.0
6.4
1.6
3.0
4.5
2.5
30
30
G
@V
Max
4.17
GS
110
50
QFET
QFET
QFET
QFET
= 10 V
S
D
May 2000
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
Rev. A, May 2000
°C
°C
W
W
V
A
A
A
V
A
TM
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