ATTIny2313-16MI ATMEL Corporation, ATTIny2313-16MI Datasheet - Page 174

• Manufacturer Part Number: ATTIny2313-16MI
• Description: 8-bit AVR Microcontroller with 2K Bytes In-System Programmable Flash
• Manufacturer: ATMEL Corporation

Data Polling Flash
Data Polling EEPROM
Table 79. Serial Programming Instruction Set
174
Instruction
Programming Enable
Chip Erase
Read Program Memory
ATtiny2313/V
1010 1100
1010 1100
0010 H000
Byte 1
When a page is being programmed into the Flash, reading an address location within
the page being programmed will give the value 0xFF. At the time the device is ready for
a new page, the programmed value will read correctly. This is used to determine when
the next page can be written. Note that the entire page is written simultaneously and any
address within the page can be used for polling. Data polling of the Flash will not work
for the value 0xFF, so when programming this value, the user will have to wait for at
least t
0xFF in all locations, programming of addresses that are meant to contain 0xFF, can be
skipped. See Table 78 for t
When a new byte has been written and is being programmed into EEPROM, reading the
address location being programmed will give the value 0xFF. At the time the device is
ready for a new byte, the programmed value will read correctly. This is used to deter-
mine when the next byte can be written. This will not work for the value 0xFF, but the
user should have the following in mind: As a chip-erased device contains 0xFF in all
locations, programming of addresses that are meant to contain 0xFF, can be skipped.
This does not apply if the EEPROM is re-programmed without chip erasing the device.
In this case, data polling cannot be used for the value 0xFF, and the user will have to
wait at least t
value.
Table 78. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Figure 78. Serial Programming Waveforms
Symbol
t
t
t
t
WD_FLASH
WD_EEPROM
WD_ERASE
WD_FUSE
SERIAL DATA OUTPUT
SERIAL CLOCK INPUT
SERIAL DATA INPUT
WD_FLASH
0101 0011
100x xxxx
0000 00aa
Byte 2
SAMPLE
WD_EEPROM
Instruction Format
(MOSI)
(MISO)
(SCK)
before programming the next page. As a chip-erased device contains
xxxx xxxx
xxxx xxxx
bbbb bbbb
before programming the next byte. See Table 78 for t
Byte 3
MSB
MSB
WD_FLASH
value.
xxxx xxxx
xxxx xxxx
oooo oooo
Byte4
Minimum Wait Delay
Operation
Enable Serial Programming after
RESET goes low.
Chip Erase EEPROM and Flash.
Read H (high or low) data o from
Program memory at word address a:b.
4.5 ms
4.0 ms
4.0 ms
4.5 ms
2543C–AVR–12/03
LSB
LSB
WD_EEPROM