LH28F800 Sharp Electrionic Components, LH28F800 Datasheet - Page 38

no-image

LH28F800

Manufacturer Part Number
LH28F800
Description
8 M-bit (512 kB x 16) SmartVoltage Flash Memories
Manufacturer
Sharp Electrionic Components
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LH28F800BGE-TL75
Manufacturer:
TI
Quantity:
1 200
Part Number:
LH28F800BGE-TL75
Manufacturer:
SHARR
Quantity:
20 000
Part Number:
LH28F800BGHB-TTL90
Manufacturer:
INTEL
Quantity:
3
Part Number:
LH28F800BGHB-TTL90
Manufacturer:
SHARP
Quantity:
20 000
Part Number:
LH28F800BGHE-TL85
Manufacturer:
SHARP
Quantity:
400
Part Number:
LH28F800BGHE-TL85
Manufacturer:
SHARR
Quantity:
1 000
Part Number:
LH28F800BGHE-TL85
Manufacturer:
SHARP
Quantity:
20 000
Part Number:
LH28F800BGHE-TTL10
Manufacturer:
HYINX
Quantity:
5 374
Part Number:
LH28F800BGHE-TTL10
Manufacturer:
SHARP
Quantity:
1 000
Part Number:
LH28F800BGHE-TTL10
Manufacturer:
SHARP
Quantity:
23 040
Part Number:
LH28F800BGHE-TTL10
Manufacturer:
SHARP
Quantity:
20 000
Part Number:
LH28F800BJE-PBTL90
Manufacturer:
SHARP
Quantity:
196
Part Number:
LH28F800BJE-PBTL90
Manufacturer:
SHARP
Quantity:
1 000
Part Number:
LH28F800BJE-PBTL90
Manufacturer:
SHARP
Quantity:
20 000
Part Number:
LH28F800BJE-PTTL90
Manufacturer:
SHARP/PBF
Quantity:
164
6.2.6 AC CHARACTERISTICS FOR CE#-CONTROLLED WRITE OPERATIONS (contd.)
NOTES :
1. In systems where CE# defines the write pulse width
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
4. V
SYMBOL
• V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHEL
WLEL
ELEH
PHHEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHGL
QVVL
QVPH
CC
(within a longer WE# timing waveform), all setup, hold,
and inactive WE# times should be measured relative to
the CE# waveform.
word write, or lock-bit configuration.
should be held at V
word write, or lock-bit configuration success (SR.1/3/4/5 = 0).
PP
= 5.0±0.25 V, 5.0±0.5 V, T
should be held at V
Write Cycle Time
RP# High Recovery to CE#
Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
RP# V
V
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to RY/BY# Going Low
Write Recovery before Read
V
RY/BY# High
RP# V
RY/BY# High
PP
PP
VERSIONS
Setup to CE# Going High
Hold from Valid SRD,
HH
HH
Setup to CE# Going High
PARAMETER
Hold from Valid SRD,
HH
) until determination of block erase,
PPH1/2/3
IN
and D
A
(and if necessary RP#
= 0 to +70˚C or –40 to +85
IN
V
V
CC
for block erase,
CC
±0.25 V
±0.5 V
NOTE
2, 4
2, 4
2
2
2
3
3
LH28F800SGH-L70
LH28F800SG-L70
(NOTE 5)
MIN.
100
100
- 38 -
70
50
40
40
25
1
0
5
5
0
0
0
0
5. See Fig. 10 "Transient Input/Output Reference
6. See Fig. 11 "Transient Input/Output Reference
MAX.
˚
C
90
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
Waveform" and Fig. 12 "Transient Equivalent Testing
Load Circuit" (High Speed Configuration) for testing
characteristics.
Waveform" and Fig. 12 "Transient Equivalent Testing
Load Circuit" (Standard Configuration) for testing
characteristics.
LH28F800SGH-L70
LH28F800SG-L70
(NOTE 6)
MIN.
100
100
80
50
40
40
25
1
0
5
5
0
0
0
0
MAX.
90
LH28F800SGH-L10
LH28F800SG-L10
(NOTE 6)
MIN.
100
100
100
50
40
40
25
1
0
5
5
0
0
0
0
MAX.
90
(NOTE 1)
UNIT
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

Related parts for LH28F800