LH28F800 Sharp Electrionic Components, LH28F800 Datasheet - Page 30

• Manufacturer Part Number: LH28F800
• Description: 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
• Manufacturer: Sharp Electrionic Components

6.2.3 DC CHARACTERISTICS (contd.)
NOTES :
1. All currents are in RMS unless otherwise noted. Typical
2. I
3. Includes RY/BY#.
4. Block erases, word writes, and lock-bit configurations are
SYMBOL
V
V
V
V
V
V
V
V
V
V
V
IL
IH
OL
OH1
OH2
PPLK
PPH1
PPH2
PPH3
LKO
HH
values at nominal V
currents are valid for all product versions (packages and
speeds).
selected. If reading or word writing in erase suspend
mode, the device’s current draw is the sum of I
I
inhibited when V
range between V
V
and V
CCWS
CCES
PPH1
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
(TTL)
Output High Voltage
(CMOS)
V
Normal Operations
V
Word Write, Block Erase
or Lock-Bit Operations
V
Word Write, Block Erase
or Lock-Bit Operations
V
Word Write, Block Erase
or Lock-Bit Operations
V
RP# Unlock Voltage
PPH3
and I
PP
PP
PP
PP
CC
(max.) and V
and I
Lockout Voltage during
Voltage during
Voltage during
Voltage during
Lockout Voltage
CCR
(min.), and above V
CCES
PARAMETER
or I
PP
PPLK
CCW
are specified with the device de-
≤ V
CC
PPH2
(max.) and V
, respectively.
voltage and T
PPLK
(min.), between V
, and not guaranteed in the
PPH3
PPH1
(max.).
A
NOTE
= +25°C. These
3, 7
3, 7
3, 7
4, 7
(min.), between
7
7
8
PPH2
V
CCWS
CC
MIN.
–0.5
–0.4
0.85
11.4
11.4
V
V
2.0
2.4
2.7
4.5
2.0
(max.)
CC
CC
= 2.7 to 3.6 V V
or
- 30 -
MAX.
+0.5
12.6
12.6
V
0.8
0.4
1.5
3.6
5.5
CC
5. Automatic Power Saving (APS) reduces typical I
6. CMOS inputs are either V
7. Sampled, not 100% tested.
8. Permanent lock-bit set operations are inhibited when
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
1 mA at 5 V V
operation.
inputs are either V
RP# = V
inhibited when the permanent lock-bit is set or RP# =
V
inhibited when the corresponding block lock-bit is set
and RP# = V
is set. Block erase, word write, and lock-bit configuration
operations are not guaranteed with V
and should not be attempted.
IH
CC
MIN.
–0.5
–0.4
0.85
11.4
11.4
V
V
2.0
2.4
4.5
2.0
—
CC
CC
and WP# = V
= 5.0±0.5 V
IH
. Block lock-bit configuration operations are
MAX.
+0.5
0.45
12.6
12.6
V
0.8
1.5
5.5
IH
—
CC
CC
and WP# = V
and 3 mA at 2.7 to 3.6 V V
IL
IL
UNIT
. Block erases and word writes are
or V
V
V
V
V
V
V
V
V
V
V
V
V
IH
CC
.
V
I
I
V
I
I
V
I
V
I
Set permanent lock-bit
Override block lock-bit
OL
OH
OL
OH
OH
OH
CC
CC
CC
CC
±0.2 V or GND±0.2 V. TTL
IL
= 2.0 mA (V
= –2.0 mA (V
= 5.8 mA (V
= –2.5 mA (V
= –2.5 µA
= –100 µA
or the permanent lock-bit
= V
= V
= V
= V
CONDITIONS
CC
CC
CC
CC
TEST
IH
Min.
Min.
Min.
Min.
CC
CC
< RP# < V
= 3.3 V, 2.7 V)
= 3.3 V, 2.7 V)
CC
CC
CC
= 5 V),
= 5 V),
in static
CCR
HH
to