LH28F800 Sharp Electrionic Components, LH28F800 Datasheet - Page 10

• Manufacturer Part Number: LH28F800
• Description: 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
• Manufacturer: Sharp Electrionic Components

NOTES :
1. Refer to Section 6.2.3 "DC CHARACTERISTICS".
2. X can be V
3. RY/BY# is V
Read
Output Disable
Standby
Deep Power-Down
Read Identifier Codes
Write
When V
not altered.
V
CHARACTERISTICS" for V
block erase, word write, or lock-bit configuration
algorithms. It is V
in block erase suspend mode (with word write inactive),
word write suspend mode, or deep power-down mode.
PPLK
MODE
or V
PP
≤ V
IL
PPH1/2/3
or V
OL
PPLK
when the WSM is executing internal
OH
IH
, memory contents can be read, but
for control pins and addresses, and
for V
during when the WSM is not busy,
1, 2, 3, 8 V
3, 6, 7, 8 V
PP
NOTE
PPLK
. See Section 6.2.3 "DC
3
3
4
8
and V
V
V
V
IH
IH
IH
IH
IH
PPH1/2/3
RP#
V
or V
or V
or V
or V
or V
IL
HH
HH
HH
HH
HH
Table 2 Bus Operations
voltages.
CE#
V
V
V
V
V
X
IH
IL
IL
IL
IL
- 10 -
OE#
V
V
V
V
X
X
4. RP# at GND±0.2 V ensures the lowest deep power-
5. See Section 4.2 for read identifier code data.
6. V
7. Refer to Table 3 for valid D
8. Don’t use the timing both OE# and WE# are V
IH
IH
IL
IL
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
down current.
not be attempted.
IH
< RP# < V
WE#
V
V
V
V
X
X
IH
IH
IH
IL
See Fig. 2
ADDRESS
HH
X
X
X
X
X
produce spurious results and should
V
IN
X
X
X
X
X
X
PP
during a write operation.
(NOTE 5)
DQ
High Z
High Z
High Z
D
D
OUT
IN
0-15
RY/BY#
IL
.
V
V
X
X
X
X
OH
OH